Thin Silicon Dioxide using the Rapid Thermal Oxidation Process for Trench Capacitors

1989 ◽  
Vol 146 ◽  
Author(s):  
Morio Inoue ◽  
Kenji Yoneda
Keyword(s):  
High Temperature ◽  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Oxidation Process ◽  
Dielectric Strength ◽  
Gate Insulator ◽  
Electrical Characteristics ◽  
Temperature Uniformity ◽  
Conventional Furnace ◽  
Thermal Oxidation Process

ABSTRACTElectrical characteristics of trench capacitor using RTO oxide, nitroxide and reoxidized nitroxide as the gate insulator are discussed. High temperature RTO is effective to prevent the oxide thinning at the trench corner and dielectric strength of trench capacitor is improved drastically. The lifetime of trench capacitors using RTO is more than 10 times longer than that of trench capacitors using conventional furnaces. Using reoxidized nitroxide as the gate insulator, higher charge to breakdown is obtained. The RTP is superior to the process using the conventional furnace for gate insulator of trench capacitor. Improvement in temperature uniformity and operation reproducibility are essential to RTP equipments for production use.

Investigations on High‐Temperature Thermal Oxidation Process at Top and Bottom Interfaces of Top Silicon of SIMOX Wafers

1996 ◽  
Vol 143 (1) ◽  
pp. 244-251 ◽  
Author(s):  
S. Nakashima ◽  
T. Katayama ◽  
Y. Miyamura ◽  
A. Matsuzaki ◽  
M. Kataoka ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Oxidation ◽  
Oxidation Process ◽  
Thermal Oxidation Process

Thin silicon dioxide and nitrided oxide using rapid thermal processing for trench capacitors

1991 ◽  
Vol 6 (11) ◽  
pp. 2362-2370 ◽  
Author(s):  
Kenji Yoneda ◽  
Yoshihiro Todokoro ◽  
Morio Inoue
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Dielectric Strength ◽  
Gate Insulator ◽  
Time To Failure ◽  
Electrical Characteristics ◽  
Gate Insulators ◽  
Conventional Furnace ◽  
The Mean ◽  
Mean Time

Electrical characteristics of trench capacitors using RTO (Rapid Thermal Oxidation) oxides, nitroxides, and reoxidized nitroxides as the gate insulators are discussed. High temperature RTO is effective in preventing oxide thinning at the trench corner, and so the dielectric strength of trench capacitors is improved drastically. The mean time to failure (MTTF) of trench capacitors using RTO is more than ten times longer than that of trench capacitors using conventional furnaces. Using reoxidized nitroxides as the gate insulator, superior charge to breakdown (QBD) is obtained. RTP (Rapid Thermal Processing) is superior to the process using the conventional furnace for the gate insulators of trench capacitors. Improvements in temperature uniformity, repeatability, and lessening of slip line formation are essential for RTP equipment to be practical.

Morphological Effect of Composite Coated SUS430 Steel during Thermal Oxidation Process

2015 ◽  
Vol 1125 ◽  
pp. 111-115
Author(s):  
Raden Dadan Ramdan ◽  
Asep Ridwan Setiawan ◽  
Rochim Suratman
Keyword(s):  
High Temperature ◽  
Thermal Oxidation ◽  
Oxidation Process ◽  
Sol Gel ◽  
Composite Layer ◽  
Morphological Aspect ◽  
Morphological Effect ◽  
Before And After ◽  
Coating Method ◽  
Thermal Oxidation Process

High temperature behaviour is important characteristic to be evaluated for internconnect materials in solid oxide fuel cell (SOFC) application. The present works concern in evaluating the morphological effect of composite coated SUS430, prospective material for SOFC application, on the high temperature behavior of the composite. Thermal spray method has been conducted as the major coating processes whereas thermal oxidation and sol gel coating is the addition coating method performed in the present works. Through variation of coating processes in the present works, different morphology of composite coated SUS430 alloy were obtained. Scanning electron microscope (SEM) characterizations have been performed in order to evaluate the morphological aspect of the coated samples before and after thermal oxidation process. In addition, X-ray diffraction characterization has been performed in order to identified the existing phase before and after thermal oxidation. From both characterization results, it was obtained that particle size of the composite layer influences the compactness and porous characteristic of the layer and in turn influences the oxidation characteristic of the layer during high temperature services.

Relationship between the structure and the thermal oxidation process of coke powders

Refractories ◽  
1992 ◽  
Vol 33 (1-2) ◽  
pp. 14-18
Author(s):  
Yu. A. Pirogov ◽  
P. Ya. Pustovar ◽  
I. A. Kutuzyan ◽  
Yu. F. Boiko
Keyword(s):  
Thermal Oxidation ◽  
Oxidation Process ◽  
Thermal Oxidation Process

Characterization of a Thermal Oxidation Process on SiC Preamorphized by Ar Ion Implantation

2004 ◽  
Vol 457-460 ◽  
pp. 1357-1360 ◽  
Author(s):  
Antonella Poggi ◽  
Roberta Nipoti ◽  
Sandro Solmi ◽  
M. Bersani ◽  
L. Vanzetti
Keyword(s):  
Ion Implantation ◽  
Thermal Oxidation ◽  
Oxidation Process ◽  
Thermal Oxidation Process

Lifetime Enhancement of 4H-SiC PiN Diodes Using High Temperature Oxidation Treatment

2018 ◽  
Vol 924 ◽  
pp. 440-443
Author(s):  
Yeganeh Bonyadi ◽  
Peter M. Gammon ◽  
Olayiwola Alatise ◽  
Roozbeh Bonyadi ◽  
Philip A. Mawby
Keyword(s):  
High Temperature ◽  
Thermal Oxidation ◽  
Carrier Lifetime ◽  
Drift Region ◽  
Electrical Characteristics ◽  
Pin Diodes ◽  
Oxidation Treatment ◽  
Temperature Oxidation ◽  
Bipolar Devices ◽  
Minority Carriers

In this paper, the application of a high temperature thermal oxidation and annealing process to 4H-SiC PiN diodes with 35 μm thick drift regions is explored, the aim of which was to increase the carrier lifetime in the 4H-SiC. Diodes were fabricated using 4H-SiC material and underwent a thermal oxidation in dry pure O2 at 1550◦C followed by an argon anneal at the same temperature. Reverse recovery tests indicated a carrier lifetime increase of around 42% which is due to increase of excessive minority carriers in the drift region. The switching results illustrate that the use of this process is a highly effective and efficient way of enhancing the electrical characteristics of high voltage 4H-SiC bipolar devices.

scholarly journals Influence of Low Temperature-Grown GaAs on Lateral Thermal Oxidation of Al0.98Ga0.02As

2000 ◽  
Vol 623 ◽  
Author(s):  
J. C. Ferrer ◽  
Z. Liliental-Weber ◽  
H. Reese ◽  
Y.J. Chiu ◽  
E. Hu
Keyword(s):  
Low Temperature ◽  
Thermal Oxidation ◽  
Oxidation Process ◽  
Gaas Layer ◽  
Transmission Electron ◽  
Low Temperature Gaas ◽  
Reference Samples ◽  
Thermal Oxidation Process ◽  
Low Temperature Grown Gaas

AbstractThe lateral thermal oxidation process of Al0.98Ga0.02As layers has been studied by transmission electron microscopy. Growing a low-temperature GaAs layer below the Al0.98Ga0.02As has been shown to result in better quality of the oxide/GaAs interfaces compared to reference samples. While the later have As precipitation above and below the oxide layer and roughness and voids at the oxide/GaAs interface, the structures with low-temperature have less As precipitation and develop interfaces without voids. These results are explained in terms of the diffusion of the As toward the low temperature layer. The effect of the addition of a Si02 cap layer is also discussed.

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