Vapor Growth of a Semiconductor Superlattice

1971 ◽  
Vol 118 (9) ◽  
pp. 1459 ◽  
Author(s):  
A. E. Blakeslee
Keyword(s):  
Vapor Growth ◽  
Semiconductor Superlattice

Critical Plasmons of a Quasiperiodic Semiconductor Superlattice

1986 ◽  
Vol 57 (3) ◽  
pp. 380-383 ◽  
Author(s):  
Pawel Hawrylak ◽  
John J. Quinn
Keyword(s):  
Semiconductor Superlattice

Surface Modes of a Type II Semiconductor Superlattice

1988 ◽  
Vol 147 (1) ◽  
pp. 141-148 ◽  
Author(s):  
K. Yonashiro ◽  
T. Tomoyose ◽  
M. Yamshiro ◽  
M. Kobayashi
Keyword(s):  
Type Ii ◽  
Surface Modes ◽  
Semiconductor Superlattice

Solution versus Vapor Growth of Dipolar Layers on Activated Oxide Substrates

Langmuir ◽  
2003 ◽  
Vol 19 (12) ◽  
pp. 4871-4875 ◽  
Author(s):  
F. Nüesch ◽  
M. Carrara ◽  
L. Zuppiroli
Keyword(s):  
Solution Versus ◽  
Vapor Growth ◽  
Oxide Substrates

LIGHT-INDUCED EXCESS CONDUCTIVITY AND THE ROLE OF ARGON IN THE DEPOSITION OF DOPING-MODULATED AMORPHOUS SILICON SUPERLATTICES.

1985 ◽  
Vol 56 ◽  
Author(s):  
F.-C. Su ◽  
S. Levine ◽  
P. E. Vanier ◽  
F. J. Kampas
Keyword(s):  
Amorphous Silicon ◽  
Amorphous Semiconductor ◽  
Excess Conductivity ◽  
The Novel ◽  
Semiconductor Superlattice ◽  
Deposition Parameters ◽  
Superlattice Structures ◽  
Argon Dilution ◽  
P Type

AbstractAmorphous semiconductor superlattice structures consisting of alternating n-type and p-type doped layers of hydrogenated amorphous silicon (a-Si:H) have been made by silane glow discharge in a single chamber system. These multilayered films show the novel phenomenon of light-induced excess conductivity (LEC) associated with a metastable state having a lifetime of order of days. This report shows that the LEC effect is quite dependent on the specific details of the deposition parameters, namely dilution of the silane with inert gas, substrate temperature and layer thickness. In order to investigate the origin of the LEC effect, argon dilution was used for specific regions of the structure. This experiment shows that the slow states are distributed throughout the layers, and are not concentrated at the interfaces.

scholarly journals Vapor growth of doped mercuric iodide crystals by the Temperature Oscillation Method

1977 ◽  
Vol 42 ◽  
pp. 160-165 ◽  
Author(s):  
L. Van Den Berg ◽  
W.F. Schnepple ◽  
C. Ortale ◽  
M. Schieber
Keyword(s):  
Temperature Oscillation ◽  
Mercuric Iodide ◽  
Vapor Growth ◽  
Oscillation Method

Detection of Bloch oscillations in a semiconductor superlattice by time-resolved terahertz spectroscopy and degenerate four-wave mixing

1994 ◽  
Vol 37 (4-6) ◽  
pp. 1321-1326 ◽  
Author(s):  
Christian Waschke ◽  
Patrick Leisching ◽  
Peter Haring Bolivar ◽  
Ralf Schwedler ◽  
Frank Brüggemann ◽  
...  
Keyword(s):  
Terahertz Spectroscopy ◽  
Four Wave Mixing ◽  
Wave Mixing ◽  
Bloch Oscillations ◽  
Time Resolved ◽  
Semiconductor Superlattice ◽  
Degenerate Four Wave Mixing

Vapor Growth of AlP Single Crystals

1966 ◽  
Vol 113 (5) ◽  
pp. 467 ◽  
Author(s):  
F. J. Reid ◽  
S. E. Miller ◽  
H. L. Goering
Keyword(s):  
Single Crystals ◽  
Vapor Growth

scholarly journals Chemical Vapor Growth of Titanium Diboride Whisker

1975 ◽  
Vol 48 (11) ◽  
pp. 3156-3160 ◽  
Author(s):  
Seiji Motojima ◽  
Fumio Sugimori ◽  
Yasutaka Takahashi ◽  
Kohzo Sugiyama
Keyword(s):  
Titanium Diboride ◽  
Chemical Vapor ◽  
Vapor Growth
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