Epitaxial Deposition of SiC onto 4H SiC using a Hollow Cathode

2019 ◽  
Vol 16 (7) ◽  
pp. 201-210 ◽  
Author(s):  
Rodney J. Soukup ◽  
Natale Ianno ◽  
James Huguenin-Love ◽  
Noel Lauer ◽  
Tino Hofmann ◽  
...  
2010 ◽  
Vol 1246 ◽  
Author(s):  
James L Huguenin-Love ◽  
Rodney J Soukup ◽  
Natale J Ianno ◽  
Nole T Lauer

AbstractEpitaxial 3C-SiC was grown using an unconventional technique for epitaxial growth. Thin films of 3C-SiC were deposited onto the (111) and (110) faces of Si using pulsed DC sputtering of a high purity, hollow cathode SiC target. The films were studied using x-ray diffraction (XRD), reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM), and auger electron spectroscopy (AES) techniques. XRD results presented as Bragg diffraction spectra and pole figures, and electron diffraction patterns verify crystal orientation and epitaxy. In addition, AES profiles identify the compositional integrity of the deposited films.


1979 ◽  
Vol 40 (C7) ◽  
pp. C7-229-C7-230
Author(s):  
N. N. Rykalin ◽  
A. V. Nikolaev ◽  
A. P. Borzhov

1983 ◽  
Vol 44 (C7) ◽  
pp. C7-479-C7-487 ◽  
Author(s):  
M. Broglia ◽  
F. Catoni ◽  
P. Zampetti

2020 ◽  
Vol 60 (1) ◽  
pp. 015501
Author(s):  
Shoki Abe ◽  
Katsuyuki Takahashi ◽  
Seiji Mukaigawa ◽  
Koichi Takaki ◽  
Ken Yukimura

1971 ◽  
Vol 7 (3) ◽  
pp. 61 ◽  
Author(s):  
I.I. Aksenov ◽  
V.A. Belous ◽  
S.A. Smirnov

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