Cell Cultivation on the Porous Silicon Surface for Cell Chip Application

2019 ◽  
Vol 16 (14) ◽  
pp. 113-116 ◽  
Author(s):  
Yasuko Yanagida ◽  
Shinsuke Naito ◽  
Yasuhiro Tanaka ◽  
Tatsuro Endo ◽  
Takeshi Hatsuzawa
Keyword(s):  
Porous Silicon ◽  
Silicon Surface ◽  
Cell Cultivation ◽  
Porous Silicon Surface ◽  
Cell Chip

Angular Ellipsometry of Porous Silicon Surface Layers

2020 ◽  
Vol 12 (3) ◽  
pp. 03024-1-03024-4
Author(s):  
L. V. Poperenko ◽  
◽  
S. G. Rozouvan ◽  
I. V. Yurgelevych ◽  
P. O. Lishchuk ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Surface ◽  
Surface Layers ◽  
Porous Silicon Surface

scholarly journals Enhancement of the photoluminescence property of hybrid structures using single-walled carbon nanotubes/pyramidal porous silicon surface

2018 ◽  
Vol 731 ◽  
pp. 978-984 ◽  
Author(s):  
Haythem Gammoudi ◽  
Fatma Belkhiria ◽  
Kamel Sahlaoui ◽  
Walid Zaghdoudi ◽  
Mahmoud Daoudi ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Porous Silicon ◽  
Silicon Surface ◽  
Photoluminescence Property ◽  
Single Walled Carbon Nanotubes ◽  
Hybrid Structures ◽  
Single Walled Carbon ◽  
Porous Silicon Surface ◽  
Walled Carbon Nanotubes

Chemical Modification of the Porous Silicon Surface

1994 ◽  
Vol 358 ◽  
Author(s):  
Eric J. Lee ◽  
James S. Ha ◽  
Michael J. Sailor
Keyword(s):  
Porous Silicon ◽  
Chemical Modification ◽  
Formic Acid ◽  
Gas Phase ◽  
Silicon Surface ◽  
Chemical Vapor ◽  
Luminescence Quenching ◽  
Porous Silicon Surface ◽  
Phase Water ◽  
Surface Modified

ABSTRACTThe porous silicon (PS) surface is derivatized with ethanol, triethylsilanol and formic acid as well as oxidized with water. The two reactions used to prepare these surfaces are discussed, and FTIR spectra of the products are presented. Surface-modified PS retains 10-40% of its original photoluminescence. PS-derivatives display reversible luminescence quenching by gas phase water, ethanol, acetonitrile and benzene. The extent of quenching varies with different PS-derivatives depending on the interaction of the chemical vapor with the modified PS surfaces.

Room‐temperature backbond oxidation of the porous silicon surface by oxygen radical irradiation

1995 ◽  
Vol 66 (7) ◽  
pp. 836-838 ◽  
Author(s):  
Patrick O’Keeffe ◽  
Yoshinobu Aoyagi ◽  
Shuji Komuro ◽  
Takashi Kato ◽  
Takitaro Morikawa
Keyword(s):  
Porous Silicon ◽  
Silicon Surface ◽  
Room Temperature ◽  
Oxygen Radical ◽  
Porous Silicon Surface

scholarly journals Some features of controlling the composition of a porous silicon surface with the use of “simplest” post-treatment techniques

2020 ◽  
Vol 1482 ◽  
pp. 012012
Author(s):  
A S Lenshin ◽  
V M Kaskarov ◽  
P V Seredin ◽  
A O Belorus ◽  
V A Moshnikov
Keyword(s):  
Porous Silicon ◽  
Silicon Surface ◽  
Post Treatment ◽  
Porous Silicon Surface ◽  
Treatment Techniques

Grafting of functionalized polymer on porous silicon surface using Grignard reagent

2017 ◽  
Vol 421 ◽  
pp. 82-88 ◽  
Author(s):  
F-Z. Tighilt ◽  
S. Belhousse ◽  
S. Sam ◽  
K. Hamdani ◽  
K. Lasmi ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Surface ◽  
Grignard Reagent ◽  
Porous Silicon Surface

scholarly journals Effects of «simplest» post-treatment techniques on the composition of porous silicon surface

2020 ◽  
Vol 889 ◽  
pp. 012023
Author(s):  
A S Lenshin ◽  
O V Chernousova ◽  
P V Seredin ◽  
K A Barkov ◽  
D A Minakov
Keyword(s):  
Porous Silicon ◽  
Silicon Surface ◽  
Post Treatment ◽  
Porous Silicon Surface ◽  
Treatment Techniques

Hydrosilylation of 1‐dodecene on Nanostructured Porous Silicon Surface: Role of Current Density and Stabilizing Agent

2009 ◽  
Author(s):  
Shalini Singh ◽  
Shailesh N. Sharma ◽  
Govind ◽  
Mukhtar A. Khan ◽  
P. K. Singh
Keyword(s):  
Porous Silicon ◽  
Current Density ◽  
Silicon Surface ◽  
Stabilizing Agent ◽  
Porous Silicon Surface

The potential formation of O2− on an oxidizing porous silicon surface a source of oxygen atoms

1997 ◽  
Vol 82 (6) ◽  
pp. 3125-3128 ◽  
Author(s):  
James L. Gole ◽  
Frank P. Dudel
Keyword(s):  
Porous Silicon ◽  
Silicon Surface ◽  
Porous Silicon Surface ◽  
Potential Formation ◽  
Oxygen Atoms

Influence of Iodine-Containing Solutions on the Condition of a Porous Silicon Surface and Its Photoluminescent Properties

2004 ◽  
Vol 71 (1) ◽  
pp. 89-93 ◽  
Author(s):  
T. V. Voloshina ◽  
I. V. Kavetskaya ◽  
V. A. Karavanskii
Keyword(s):  
Porous Silicon ◽  
Silicon Surface ◽  
Porous Silicon Surface
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