Fabrication of Thick-film Silicon-on-Insulator by Separation by Implanted Oxygen Layer Transfer

2019 ◽  
Vol 19 (4) ◽  
pp. 311-316
Author(s):  
Xing Wei ◽  
Ai Min Wu ◽  
Bo Zhang ◽  
Miao Zhang ◽  
Xi Wang ◽  
...  
Keyword(s):  
Thick Film ◽  
Silicon On Insulator ◽  
Layer Transfer ◽  
Oxygen Layer

Investigation on Silicon on Insulator Fabricated by Separation by Implanted Oxygen Layer Transfer

2010 ◽  
Vol 157 (1) ◽  
pp. H81 ◽  
Author(s):  
Xing Wei ◽  
Aimin Wu ◽  
Xiang Wang ◽  
Xianyuan Li ◽  
Fei Ye ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Layer Transfer ◽  
Oxygen Layer

Method of Detecting Trace Metal Contamination in Thick-Film SOI Device

2005 ◽  
Author(s):  
Yasunori Goto ◽  
Hiroomi Eguchi ◽  
Masaru Iida
Keyword(s):  
Trace Metal ◽  
Thick Film ◽  
Metal Contamination ◽  
Semiconductor Device ◽  
Trace Element Analysis ◽  
Silicon On Insulator ◽  
Element Analysis ◽  
Trace Metal Contamination ◽  
Trace Metal Elements ◽  
Output Characteristics

Abstract In the automotive IC using thick-film silicon on insulator (SOI) semiconductor device, if the gettering capability of a SOI wafer is inadequate, electrical characteristics degradation by metal contamination arises and the yield falls. At this time, an automotive IC was made experimentally for evaluation of the gettering capability as one of the purposes. In this IC, one of the output characteristics varied from the standard, therefore failure analysis was performed, which found trace metal elements as one of the causes. By making full use of 3D perspective, it is possible to fabricate a site-specific sample into 0.1 micrometre in thickness without missing a failure point that has very minute quantities of contaminant in a semiconductor device. Using energy dispersive X-ray, it is possible to detect trace metal contamination at levels 1E12 atoms per sq cm. that are conventionally detected only by trace element analysis.

Fabrication of silicon-on-insulator-multilayer structure by epitaxial layer transfer

2003 ◽  
Vol 336 (3-4) ◽  
pp. 344-348 ◽  
Author(s):  
Xinyun Xie ◽  
Weili Liu ◽  
Qing Lin ◽  
Chuanling Men ◽  
Chenglu Lin
Keyword(s):  
Epitaxial Layer ◽  
Multilayer Structure ◽  
Silicon On Insulator ◽  
Layer Transfer

Studies on silicon-on-insulator-multilayer structures prepared by epitaxial layer transfer

2004 ◽  
Vol 58 (3-4) ◽  
pp. 465-469
Author(s):  
Xinyun Xie ◽  
Qing Lin ◽  
Weili Liu ◽  
Chenglu Lin
Keyword(s):  
Epitaxial Layer ◽  
Silicon On Insulator ◽  
Multilayer Structures ◽  
Layer Transfer

Fabrication of silicon-on-insulator structure with Si3N4 as buried insulating films by epitaxial layer transfer

2002 ◽  
Vol 245 (3-4) ◽  
pp. 207-211 ◽  
Author(s):  
Xinyun Xie ◽  
Ninglin Zhang ◽  
Chuanling Men ◽  
Weili Liu ◽  
Qing Lin ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Silicon On Insulator ◽  
Layer Transfer ◽  
Insulating Films

Fabrication of silicon-on-insulator wafer by SIMOX layer transfer

2008 ◽  
Author(s):  
Xing Wei ◽  
Bo Zhang ◽  
Meng Chen ◽  
Miao Zhang ◽  
Xi Wang ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Layer Transfer
Sign in / Sign up

Export Citation Format

Share Document