Characterization and analysis of silicon on insulator fabricated by separation by implanted oxygen layer transfer

2010 ◽  
Vol 28 (1) ◽  
pp. 163-168 ◽  
Author(s):  
Xing Wei ◽  
Aimin Wu ◽  
Xiang Wang ◽  
Xianyuan Li ◽  
Fei Ye ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Layer Transfer ◽  
Oxygen Layer

Investigation on Silicon on Insulator Fabricated by Separation by Implanted Oxygen Layer Transfer

2010 ◽  
Vol 157 (1) ◽  
pp. H81 ◽  
Author(s):  
Xing Wei ◽  
Aimin Wu ◽  
Xiang Wang ◽  
Xianyuan Li ◽  
Fei Ye ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Layer Transfer ◽  
Oxygen Layer

Fabrication of Thick-film Silicon-on-Insulator by Separation by Implanted Oxygen Layer Transfer

2019 ◽  
Vol 19 (4) ◽  
pp. 311-316
Author(s):  
Xing Wei ◽  
Ai Min Wu ◽  
Bo Zhang ◽  
Miao Zhang ◽  
Xi Wang ◽  
...  
Keyword(s):  
Thick Film ◽  
Silicon On Insulator ◽  
Layer Transfer ◽  
Oxygen Layer

Fabrication of silicon-on-insulator-multilayer structure by epitaxial layer transfer

2003 ◽  
Vol 336 (3-4) ◽  
pp. 344-348 ◽  
Author(s):  
Xinyun Xie ◽  
Weili Liu ◽  
Qing Lin ◽  
Chuanling Men ◽  
Chenglu Lin
Keyword(s):  
Epitaxial Layer ◽  
Multilayer Structure ◽  
Silicon On Insulator ◽  
Layer Transfer

Studies on silicon-on-insulator-multilayer structures prepared by epitaxial layer transfer

2004 ◽  
Vol 58 (3-4) ◽  
pp. 465-469
Author(s):  
Xinyun Xie ◽  
Qing Lin ◽  
Weili Liu ◽  
Chenglu Lin
Keyword(s):  
Epitaxial Layer ◽  
Silicon On Insulator ◽  
Multilayer Structures ◽  
Layer Transfer

Fabrication of silicon-on-insulator structure with Si3N4 as buried insulating films by epitaxial layer transfer

2002 ◽  
Vol 245 (3-4) ◽  
pp. 207-211 ◽  
Author(s):  
Xinyun Xie ◽  
Ninglin Zhang ◽  
Chuanling Men ◽  
Weili Liu ◽  
Qing Lin ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Silicon On Insulator ◽  
Layer Transfer ◽  
Insulating Films

Fabrication of silicon-on-insulator wafer by SIMOX layer transfer

2008 ◽  
Author(s):  
Xing Wei ◽  
Bo Zhang ◽  
Meng Chen ◽  
Miao Zhang ◽  
Xi Wang ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Layer Transfer

Strained Silicon On Insulator wafers made by the Smart Cut™ technology

2004 ◽  
Vol 809 ◽  
Author(s):  
B. Ghyselen ◽  
Y. Bogumilowicz ◽  
C. Aulnette ◽  
A. Abbadie ◽  
B. Osternaud ◽  
...  
Keyword(s):  
Thin Films ◽  
Hole Mobility ◽  
Silicon On Insulator ◽  
Strained Silicon ◽  
Layer Transfer ◽  
Strained Si ◽  
Engineered Substrates

ABSTRACTStrained Silicon On Insulator wafers are today envisioned as a natural and powerfulenhancement to standard SOI and/or bulk-like strained Si layers. For MOSFETs applications, thisnew technology potentially combines enhanced devices scalability allowed by thin films andenhanced electron and hole mobility in strained silicon. This paper is intended to demonstrate byexperimental results how a layer transfer technique such as the Smart Cut™ technology can be usedto obtain good quality tensile Strained Silicon On insulator wafers. Detailed experiments andcharacterizations will be used to characterize these engineered substrates and show that they arecompatible with the applications.

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