Numerical Modeling of Noise and Transport in SOI Devices

2019 ◽  
Vol 35 (5) ◽  
pp. 303-312
Author(s):  
Bernd Meinerzhagen ◽  
Ahn-Tuan Pham ◽  
Sung-Min Hong ◽  
Christoph Jungemann
Keyword(s):  
Numerical Modeling ◽  
Soi Devices

scholarly journals Numerical modeling of linear doping profiles for high-voltage thin-film SOI devices

1999 ◽  
Vol 46 (5) ◽  
pp. 1036-1041 ◽  
Author(s):  
Shengdong Zhang ◽  
J.K.O. Sin ◽  
T.M.L. Lai ◽  
P.K. Ko
Keyword(s):  
Thin Film ◽  
Numerical Modeling ◽  
High Voltage ◽  
Soi Devices ◽  
Doping Profiles

Prediction of LPCVD silicon film microstructure from local operating conditions using numerical modeling

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-181-Pr8-188 ◽  
Author(s):  
A. Dollet ◽  
B. Caussat ◽  
J. P. Couderc
Keyword(s):  
Numerical Modeling ◽  
Silicon Film ◽  
Operating Conditions ◽  
Film Microstructure

Investigation of Morphosedimentary Processes on a Schematic Louisiana Barrier Island Using Process-Based Numerical Modeling

2007 ◽  
Author(s):  
T. Campbell ◽  
B. de Sonneville ◽  
L. Benedet ◽  
D. J. W. Walstra ◽  
C. W. Finkl
Keyword(s):  
Numerical Modeling ◽  
Barrier Island

Numerical Modeling of Hurricane-Induced Extreme Wave Heights in Pensacola Bay

2013 ◽  
Author(s):  
Wenrui Huang ◽  
Yuan He ◽  
Shuguang Liu
Keyword(s):  
Numerical Modeling ◽  
Extreme Wave ◽  
Wave Heights

SIMULATION OF ELECTRICAL MONITORING OF DAMS WITH LEAKAGE WITH A TRANSVERSE PLACEMENT OF THE MEASURING INSTALLATION

2020 ◽  
Vol 8 (4) ◽  
pp. 69-82
Author(s):  
D.S. Rakisheva ◽  
◽  
B.G. Mukanova ◽  
I.N. Modin ◽  
◽  
...  
Keyword(s):  
Numerical Modeling ◽  
Water Level ◽  
Electrical Resistivity Tomography ◽  
Resistivity Tomography ◽  
Measuring Installation ◽  
Basic Functions ◽  
Tomography Method ◽  
Dam Monitoring ◽  
The Mathematical Model ◽  
Measurement Line

Numerical modeling of the problem of dam monitoring by the Electrical Resistivity Tomography method is carried out. The mathematical model is based on integral equations with a partial Fourier transform with respect to one spatial variable. It is assumed that the measurement line is located across the dam longitude. To approximate the shape of the dam surface, the Radial Basic Functions method is applied. The influence of locations of the water-dam, dam-basement, basement-leakage boundaries with respect to the sounding installation, which is partially placed under the headwater, is studied. Numerical modeling is carried out for the following varied parameters: 1) water level at the headwater; 2) the height of the leak; 3) the depth of the leak; 4) position of the supply electrode; 5) water level and leaks positions are changing simultaneously. Modeling results are presented in the form of apparent resistivity curves, as it is customary in geophysical practice.

Numerical modeling to well-head protection area delineation, an example in Veneto Region (NE Italy)

2015 ◽  
Vol 35 ◽  
pp. 232-235 ◽  
Author(s):  
Leonardo Piccinini ◽  
Paolo Fabbri ◽  
Marco Pola ◽  
Enrico Marcolongo ◽  
Alessia Rosignoli
Keyword(s):  
Numerical Modeling ◽  
Veneto Region ◽  
Ne Italy ◽  
Head Protection ◽  
Protection Area

Numerical modeling of regional groundwater flow in the Adda-Ticino Basin: advances and new results

2016 ◽  
Vol 41 ◽  
pp. 10-13 ◽  
Author(s):  
Luca Alberti ◽  
Martino Cantone ◽  
Silvia Lombi ◽  
Alessandra Piana
Keyword(s):  
Numerical Modeling ◽  
Groundwater Flow ◽  
Regional Groundwater

The advancement of silicon-on-insulator (SOI) devices and their basic properties

2020 ◽  
Vol 23 (3) ◽  
pp. 227-252
Author(s):  
T.E. Rudenko ◽  
◽  
A.N. Nazarov ◽  
V.S. Lysenko ◽  
◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Basic Properties ◽  
Soi Devices
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