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(Invited) Direct Observation of Electronic States in Gate Stack Structures: XPS under Device Operation
ECS Transactions
◽
10.1149/1.3633313
◽
2019
◽
Vol 41
(7)
◽
pp. 331-336
◽
Cited By ~ 4
Author(s):
Yoshiyuki Yamashita
◽
Hideki Yoshikawa
◽
Toyohiro Chikyo
◽
Keisuke Kobayashi
Keyword(s):
Direct Observation
◽
Electronic States
◽
Gate Stack
◽
Device Operation
Download Full-text
Related Documents
Cited By
References
Direct Observation of Electronic States in Gate Stack Structures: XPS under Device Operation
ECS Meeting Abstracts
◽
10.1149/ma2011-02/32/2149
◽
2011
◽
Keyword(s):
Direct Observation
◽
Electronic States
◽
Gate Stack
◽
Device Operation
Download Full-text
Direct observation of bias-dependence potential distribution in metal/HfO2 gate stack structures by hard x-ray photoelectron spectroscopy under device operation
Journal of Applied Physics
◽
10.1063/1.4863637
◽
2014
◽
Vol 115
(4)
◽
pp. 043721
◽
Cited By ~ 2
Author(s):
Y. Yamashita
◽
H. Yoshikawa
◽
T. Chikyo
◽
K. Kobayashi
Keyword(s):
Direct Observation
◽
Photoelectron Spectroscopy
◽
Potential Distribution
◽
Gate Stack
◽
X Ray
◽
Dependence Potential
◽
Device Operation
Download Full-text
Direct Observation of Distinctive Electronic States of Ferrocene Moieties in Ferrocene-Bridged Trisporphyrin on Au(111) Using Scanning Tunneling Microscopy/Spectroscopy
Langmuir
◽
10.1021/acs.langmuir.1c00602
◽
2021
◽
Author(s):
Hiroyuki Tanaka
◽
Akiharu Satake
◽
Masateru Taniguchi
Keyword(s):
Scanning Tunneling Microscopy
◽
Direct Observation
◽
Electronic States
◽
Scanning Tunneling
◽
Tunneling Microscopy
Download Full-text
Erratum: “Direct observation of the electronic states of single crystalline rubrene under ambient condition by photoelectron yield spectroscopy” [Appl. Phys. Lett. 93, 173305 (2008)]
Applied Physics Letters
◽
10.1063/1.4729938
◽
2012
◽
Vol 100
(26)
◽
pp. 269901
Author(s):
Yasuo Nakayama
◽
Shinichi Machida
◽
Takeo Minari
◽
Kazuhito Tsukagoshi
◽
Yutaka Noguchi
◽
...
Keyword(s):
Direct Observation
◽
Electronic States
◽
Ambient Condition
◽
Single Crystalline
Download Full-text
Direct Observation of Hole Accumulation in Polymer Solar Cells During Device Operation using Light-Induced Electron Spin Resonance
Advanced Materials
◽
10.1002/adma.201204015
◽
2013
◽
Vol 25
(16)
◽
pp. 2362-2367
◽
Cited By ~ 40
Author(s):
Tatsuya Nagamori
◽
Kazuhiro Marumoto
Keyword(s):
Solar Cells
◽
Electron Spin Resonance
◽
Electron Spin
◽
Direct Observation
◽
Polymer Solar Cells
◽
Spin Resonance
◽
Device Operation
Download Full-text
New Direct Spectroscopic Method for Determination of Bias-Dependent Electronic States: Hard X-ray Photoelectron Spectroscopy Under Device Operation
Japanese Journal of Applied Physics
◽
10.7567/jjap.52.108005
◽
2013
◽
Vol 52
(10R)
◽
pp. 108005
◽
Cited By ~ 3
Author(s):
Yoshiyuki Yamashita
◽
Hideki Yoshikawa
◽
Toyohiro Chikyo
◽
Keisuke Kobayashi
Keyword(s):
Photoelectron Spectroscopy
◽
Spectroscopic Method
◽
Electronic States
◽
X Ray
◽
Device Operation
Download Full-text
Direct observation of spin-resolved valence band electronic states from a buried magnetic layer with hard X-ray photoemission
Science and Technology of Advanced Materials
◽
10.1080/14686996.2021.1912576
◽
2021
◽
Author(s):
Shigenori Ueda
◽
Yuya Sakuraba
Keyword(s):
Valence Band
◽
Direct Observation
◽
Magnetic Layer
◽
Electronic States
◽
X Ray
Download Full-text
Direct observation of Al-doping-induced electronic states in the valence band and band gap of ZnO films
Physical Review B
◽
10.1103/physrevb.84.153303
◽
2011
◽
Vol 84
(15)
◽
Cited By ~ 17
Author(s):
Mercedes Gabás
◽
Piero Torelli
◽
Nicholas T. Barrett
◽
Maurizio Sacchi
◽
Fabien Bruneval
◽
...
Keyword(s):
Band Gap
◽
Valence Band
◽
Direct Observation
◽
Electronic States
◽
Zno Films
◽
Al Doping
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Direct observation of adsorption-induced electronic states by low-temperature scanning tunneling microscopy
Ultramicroscopy
◽
10.1016/j.ultramic.2005.06.013
◽
2005
◽
Vol 105
(1-4)
◽
pp. 22-25
◽
Cited By ~ 8
Author(s):
Masaki Takada
◽
Hirokazu Tada
Keyword(s):
Low Temperature
◽
Scanning Tunneling Microscopy
◽
Direct Observation
◽
Electronic States
◽
Scanning Tunneling
◽
Tunneling Microscopy
◽
Temperature Scanning
Download Full-text
Bias-Dependence Potential Distribution in Gate Stack Structuresby Hard-X-ray Photoelectron Spectroscopy under Device Operation
Hyomen Kagaku
◽
10.1380/jsssj.35.361
◽
2014
◽
Vol 35
(7)
◽
pp. 361-364
Author(s):
Yoshiyuki YAMASHITA
◽
Hideki YOSHIKAWA
◽
Toyohiro CHIKYOW
◽
Keisuke KOBAYASHI
Keyword(s):
Photoelectron Spectroscopy
◽
Potential Distribution
◽
Gate Stack
◽
X Ray
◽
Dependence Potential
◽
Device Operation
Download Full-text
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