Structural, Elemental, and Chemical Complex Defects in Silicon and Their Impact on Silicon Devices

2005 ◽  
Vol 14 (1) ◽  
pp. 34-36
Author(s):  
Andrei Istratov ◽  
Eicke Weber
Keyword(s):  
Silicon Devices ◽  
Chemical Complex

Micro-Raman Spectroscopy Evaluation of the Local Mechanical Stress in Shallow Trench Isolation CMOS Structures: Correlation with Defect Generation and Diode Leakage

1998 ◽  
Author(s):  
I. De Wolf ◽  
G. Groeseneken ◽  
H.E. Maes ◽  
M. Bolt ◽  
K. Barla ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Mechanical Stress ◽  
Defect Formation ◽  
Active Area ◽  
Wet Oxidation ◽  
Leakage Currents ◽  
Shallow Trench Isolation ◽  
Micro Raman Spectroscopy ◽  
Silicon Devices ◽  
Trench Isolation

Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.

scholarly journals Research the content of waste (yellow oil) of the shurtan gas chemical complex in Uzbekistan

2021 ◽  
Vol 1889 (2) ◽  
pp. 022057
Author(s):  
Lochin Tilloev ◽  
Khamro Dustov ◽  
Azam Alimov ◽  
Farkhod Bobokulov ◽  
Furkat Ruziev
Keyword(s):  
Chemical Complex

Terahertz emission from electrically pumped gallium doped silicon devices

2004 ◽  
Vol 85 (17) ◽  
pp. 3660-3662 ◽  
Author(s):  
P.-C. Lv ◽  
R. T. Troeger ◽  
S. Kim ◽  
S. K. Ray ◽  
K. W. Goossen ◽  
...  
Keyword(s):  
Terahertz Emission ◽  
Silicon Devices ◽  
Electrically Pumped ◽  
Doped Silicon
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