2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
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9781509019786

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Gate voltage dependence of channel length modulation for 14 nm FinFETs

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2016.7521673 ◽

2016 ◽

Cited By ~ 1

Author(s):

Yuki Nariai ◽

Akira Hiroki

Keyword(s):

Gate Voltage ◽

Voltage Dependence ◽

Channel Length ◽

Gate Voltage Dependence

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Session A (silicon devices)

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2016.7521661 ◽

2016 ◽

Keyword(s):

Silicon Devices

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Magnetoresistance effect of Ga-Sn-O thin-film device

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2016.7521685 ◽

2016 ◽

Author(s):

Asuka Fukawa ◽

Kota Imanishi ◽

Shogo Miyamura ◽

Tokiyoshi Matsuda ◽

Mutsumi Kimura

Keyword(s):

Thin Film ◽

Magnetoresistance Effect ◽

Thin Film Device

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Characteristic evaluation of Ga-Sn-O thin films fabricated using RF magnetron sputtering

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2016.7521680 ◽

2016 ◽

Author(s):

Yuta Kato ◽

Kenta Umeda ◽

Daiki Nishimoto ◽

Tokiyoshi Matsuda ◽

Mutsumi Kimura

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Rf Magnetron Sputtering

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A 1.8/2.6 GHz CMOS high linearity power amplifier for LTE application

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2016.7521678 ◽

2016 ◽

Cited By ~ 2

Author(s):

Chih-Huang Lin ◽

Jeng-Rern Yang

Keyword(s):

Power Amplifier ◽

High Linearity

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Evaluation of initial electron distributions in ensemble Monte Carlo simulations

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2016.7521675 ◽

2016 ◽

Author(s):

Shin Hiratoko ◽

Akira Hiroki ◽

Nobuya Fujimoto

Keyword(s):

Monte Carlo ◽

Monte Carlo Simulations ◽

Ensemble Monte Carlo ◽

Initial Electron ◽

Electron Distributions

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Simulation and fabrication of test structure for micro-wall solar cell with electric-field effect

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2016.7521706 ◽

2016 ◽

Author(s):

Takashi Kusakabe ◽

Naoto Matsuo ◽

Akira Heya

Keyword(s):

Solar Cell ◽

Electric Field ◽

Field Effect ◽

Test Structure ◽

Electric Field Effect

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Stimulus performance of poly-Si thin-film transistor in in-vitro experiment for artificial retinas

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2016.7521672 ◽

2016 ◽

Author(s):

Keisuke Tomioka ◽

Shota Haruki ◽

Tokiyoshi Matsuda ◽

Mutsumi Kimura

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Vitro Experiment ◽

In Vitro Experiment ◽

Si Thin Film

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Electrochromic properties of single-crystalline tungsten trioxide films grown by molecular beam epitaxy

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2016.7521686 ◽

2016 ◽

Cited By ~ 1

Author(s):

Takayuki Murayama ◽

Wataru Kuwagata ◽

Kazuto Koike ◽

Yoshiyuki Harada ◽

Shigehiko Sasa ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Tungsten Trioxide ◽

Molecular Beam ◽

Single Crystalline ◽

Electrochromic Properties

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Impact of air exposure on physical properties of sputter-deposited undoped ZnO films

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2016.7521679 ◽

2016 ◽

Cited By ~ 1

Author(s):

N. Takahashi ◽

J. Zhang ◽

Y. Omura ◽

T. Saitoh

Keyword(s):

Physical Properties ◽

Zno Films ◽

Air Exposure ◽

Sputter Deposited

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2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Gate voltage dependence of channel length modulation for 14 nm FinFETs

Session A (silicon devices)

Magnetoresistance effect of Ga-Sn-O thin-film device

Characteristic evaluation of Ga-Sn-O thin films fabricated using RF magnetron sputtering

A 1.8/2.6 GHz CMOS high linearity power amplifier for LTE application

Evaluation of initial electron distributions in ensemble Monte Carlo simulations

Simulation and fabrication of test structure for micro-wall solar cell with electric-field effect

Stimulus performance of poly-Si thin-film transistor in in-vitro experiment for artificial retinas

Electrochromic properties of single-crystalline tungsten trioxide films grown by molecular beam epitaxy

Impact of air exposure on physical properties of sputter-deposited undoped ZnO films

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
Latest Publications