Direct Comparison of Convergent Beam Electron Diffraction and Geometric Phase Analysis for Local Strain Measurement

2010 ◽  
Vol 16 (S2) ◽  
pp. 742-743
Author(s):  
D Diercks ◽  
G Lian ◽  
J Chung ◽  
M Kaufman
Keyword(s):  
Electron Diffraction ◽  
Phase Analysis ◽  
Geometric Phase ◽  
Strain Measurement ◽  
Local Strain ◽  
Convergent Beam Electron Diffraction ◽  
Beam Electron ◽  
Geometric Phase Analysis ◽  
Convergent Beam

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Quantitative Strain Measurement in Sub-45 nm CMOS Transistors by Convergent Beam Electron Diffraction (CBED) at Low Temperature and Nano Beam Diffraction (NBD)

2008 ◽  
Vol 14 (S2) ◽  
pp. 386-387 ◽  
Author(s):  
L Clement ◽  
D Delille
Keyword(s):  
New Mexico ◽  
Electron Diffraction ◽  
Low Temperature ◽  
Strain Measurement ◽  
Convergent Beam Electron Diffraction ◽  
Beam Electron ◽  
Cmos Transistors ◽  
Convergent Beam ◽  
Beam Diffraction

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

Direct strain measurement in a 65nm node strained silicon transistor by convergent-beam electron diffraction

2006 ◽  
Vol 89 (16) ◽  
pp. 161907 ◽  
Author(s):  
Peng Zhang ◽  
Andrei A. Istratov ◽  
Eicke R. Weber ◽  
Christian Kisielowski ◽  
Haifeng He ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Strain Measurement ◽  
Convergent Beam Electron Diffraction ◽  
Strained Silicon ◽  
Beam Electron ◽  
Convergent Beam ◽  
Silicon Transistor

Measurement of Local Strain in Thin Aluminium Interconnects Using Convergent Beam Electron Diffraction (CBED)

1999 ◽  
Vol 594 ◽  
Author(s):  
S. Krämer ◽  
J. Mayer
Keyword(s):  
Electron Diffraction ◽  
Axial Strain ◽  
Local Strain ◽  
Convergent Beam Electron Diffraction ◽  
Elastic Behaviour ◽  
Large Strains ◽  
Beam Electron ◽  
Single Grain ◽  
Convergent Beam ◽  
Line Positions

AbstractEnergy filtered convergent beam electron diffraction (CBED) was used to investigate localized strain in aluminium interconnects. An analysis of the higher order Laue zone (HOLZ) line positions in CBED patterns makes it possible to measure the lattice strain with high accuracy (∼10−4) and high spatial resolution (10 to 100 nm). The strain development in a single grain was measured during thermal cycling between −170°C and + 100°C. The grain showed reversible, elastic behaviour over the whole temperature range building up large strains at low temperatures. By comparing with finite element simulations, a detailed understanding of the tri-axial strain state could be achieved.

Introduction: A Special Issue on Electron Diffraction

2003 ◽  
Vol 9 (5) ◽  
pp. 377-378 ◽  
Author(s):  
John C.H. Spence
Keyword(s):  
Electron Diffraction ◽  
Strain Measurement ◽  
Direct Methods ◽  
Convergent Beam Electron Diffraction ◽  
Special Issue ◽  
Beam Electron ◽  
Wide Range ◽  
Hours Of Work ◽  
Precession Electron Diffraction ◽  
Convergent Beam

This special issue of Microscopy and Microanalysis explores quantitative electron diffraction from nonbiological materials. Jim Turner and I have put many hours of work into bringing it together, and we thank the authors for their fine contributions. The articles cover a wide range of materials and techniques, from convergent-beam electron diffraction (CBED) to the new Kohler SAD mode, as well as the use of direct methods, the study of diffuse elastic scattering from defects, strain measurement, and multiwavelength methods. We were sorry that we could not obtain recent work using the precession electron diffraction camera by our deadline, but readers should be aware of that promising method also.

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