In Situ Atomic Force Microscopy Studies of Surface Layer Formation on LiMn2O4 Thin Films

1999 ◽  
Vol 353 (1-2) ◽  
pp. 194-200 ◽  
Author(s):  
C. Coupeau ◽  
J.F. Naud ◽  
F. Cleymand ◽  
P. Goudeau ◽  
J. Grilhé

1998 ◽  
Vol 13 (6) ◽  
pp. 1688-1692 ◽  
Author(s):  
Mika P. Valkonen ◽  
Seppo Lindroos ◽  
Tapio Kanniainen ◽  
Markku Leskelä ◽  
Roland Resch ◽  
...  

In this study zinc sulfide thin films were grown by the successive ionic layer adsorption and reaction (SILAR) technique on (100) GaAs substrates from aqueous precursor solutions. The atomic force microscopy (AFM) method was used to study the growth of the films up to a thickness of 180 nm. The ZnS thin films on (100) GaAs were smooth with an rms roughness of 0.2–1.9 nm depending on the film thickness. After the GaAs surface was covered with ZnS, the growth appeared to be nearly layerwise. In addition, in situ AFM studies were carried out to analyze the dissolution of (100) GaAs in water, which is a process competing with the thin film deposition by the SILAR.


2005 ◽  
Vol 38 (2) ◽  
pp. 211-215 ◽  
Author(s):  
Yonggui Liao ◽  
Zhaohui Su ◽  
Xianggui Ye ◽  
Yunqi Li ◽  
Jichun You ◽  
...  

1995 ◽  
Vol 99 (47) ◽  
pp. 17198-17206 ◽  
Author(s):  
F. Santerre ◽  
R. Cote ◽  
G. Lalande ◽  
L. Gastonguay ◽  
D. Guay ◽  
...  

2002 ◽  
Vol 8 (5) ◽  
pp. 422-428 ◽  
Author(s):  
L.Y. Beaulieu ◽  
A.D. Rutenberg ◽  
J.R. Dahn

Measuring the changing thickness of a thin film, without a reference, using an atomic force microscope (AFM) is problematic. Here, we report a method for measuring film thickness based on in situ monitoring of surface roughness of films as their thickness changes. For example, in situ AFM roughness measurements have been performed on alloy film electrodes on rigid substrates as they react with lithium electrochemically. The addition (or removal) of lithium to (or from) the alloy causes the latter to expand (or contract) reversibly in the direction perpendicular to the substrate and, in principle, the change in the overall height of these materials is directly proportional to the change in roughness. If the substrate on which the film is deposited is not perfectly smooth, a correction to the direct proportionality is needed and this is also discussed.


2002 ◽  
Vol 09 (05n06) ◽  
pp. 1729-1733
Author(s):  
W. LOPERA ◽  
D. GIRATÁ ◽  
F. PÉREZ ◽  
L. F. CASTRO ◽  
E. BACA ◽  
...  

Surface topography on epitaxial HoBa 2 Cu 3 O 7-δ (HBCO) and Bi 2 Sr 2 CaCu 2 O 8+δ (BSCCO) thin films analysis by using the atomic force microscopy (AFM) technique was carried out. The films were deposited in situ on SrTiO 3 substrates with thicknesses ranging from 100 to 300 nm by a high-pressure sputtering process. Chemical etching with a nonaqueous solution of Br-ethanol was used to modify the surface of the samples. HBCO films showed spiral grains, while BSCCO samples exhibited a terraced growth. Etching with Br-ethanol has different effects on HBCO and BSCCO. In HBCO, etching produces clean surfaces with light changes on the surface morphology, whereas in BSCCO it conduces to strong changes in the structure and the roughness of the film surface.


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