Chemical Nanoanalyses at Grain Boundaries By Joint Use of Scanning Transmission Electron Microscopy and Atom Probe Tomography

2018 ◽  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Boundaries ◽  
Atom Probe Tomography ◽  
Scanning Transmission Electron Microscopy ◽  
Atom Probe ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission

scholarly journals Correlating Atom Probe Tomography with Atomic-Resolved Scanning Transmission Electron Microscopy: Example of Segregation at Silicon Grain Boundaries

2017 ◽  
Vol 23 (2) ◽  
pp. 291-299 ◽  
Author(s):  
Andreas Stoffers ◽  
Juri Barthel ◽  
Christian H. Liebscher ◽  
Baptiste Gault ◽  
Oana Cojocaru-Mirédin ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Atom Probe Tomography ◽  
Scanning Transmission Electron Microscopy ◽  
Atom Probe ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission

AbstractIn the course of a thorough investigation of the performance-structure-chemistry interdependency at silicon grain boundaries, we successfully developed a method to systematically correlate aberration-corrected scanning transmission electron microscopy and atom probe tomography. The correlative approach is conducted on individual APT and TEM specimens, with the option to perform both investigations on the same specimen in the future. In the present case of a Σ9 grain boundary, joint mapping of the atomistic details of the grain boundary topology, in conjunction with chemical decoration, enables a deeper understanding of the segregation of impurities observed at such grain boundaries.

scholarly journals Correlative atom probe tomography and scanning transmission electron microscopy reveal growth sequence of LPSO phase in Mg alloy containing Al and Gd

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Koji Inoue ◽  
Kenta Yoshida ◽  
Yasuyoshi Nagai ◽  
Kyosuke Kishida ◽  
Haruyuki Inui
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atom Probe Tomography ◽  
Scanning Transmission Electron Microscopy ◽  
Atom Probe ◽  
Lateral Growth ◽  
Lpso Phase ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission

AbstractAtom probe tomography (APT) and transmission electron microscopy (TEM)/scanning transmission electron microscopy (STEM) have been used correlatively to explore atomic-scale local structure and chemistry of the exactly same area in the vicinity of growth front of a long-period stacking ordered (LPSO) phase in a ternary Mg–Al–Gd alloy. It is proved for the first time that enrichment of Gd atoms in four consecutive (0001) atomic layers precedes enrichment of Al atoms so that the formation of Al6Gd8 clusters occurs only after sufficient Al atoms to form Al6Gd8 clusters diffuse into the relevant portions. Lateral growth of the LPSO phase is found to occur by ‘ledge’ mechanism with the growth habit plane either {1$$\overline{1}$$ 1 ¯ 00} or {11$$\overline{2}$$ 2 ¯ 0} planes. The motion of ledges that give rise to lateral growth of the LPSO phase is considered to be controlled by diffusion of Al atoms.

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