Artificial Neuron Based on TiO2 Cbram for Neuromorphic Computing

2019 ◽  
Vol 31 (23) ◽  
pp. 1970167 ◽  
Author(s):  
Aleksandr Kurenkov ◽  
Samik DuttaGupta ◽  
Chaoliang Zhang ◽  
Shunsuke Fukami ◽  
Yoshihiko Horio ◽  
...  

2021 ◽  
Vol 15 ◽  
Author(s):  
Irene Muñoz-Martin ◽  
Stefano Bianchi ◽  
Shahin Hashemkhani ◽  
Giacomo Pedretti ◽  
Octavian Melnic ◽  
...  

One of the main goals of neuromorphic computing is the implementation and design of systems capable of dynamic evolution with respect to their own experience. In biology, synaptic scaling is the homeostatic mechanism which controls the frequency of neural spikes within stable boundaries for improved learning activity. To introduce such control mechanism in a hardware spiking neural network (SNN), we present here a novel artificial neuron based on phase change memory (PCM) devices capable of internal regulation via homeostatic and plastic phenomena. We experimentally show that this mechanism increases the robustness of the system thus optimizing the multi-pattern learning under spike-timing-dependent plasticity (STDP). It also improves the continual learning capability of hybrid supervised-unsupervised convolutional neural networks (CNNs), in terms of both resilience and accuracy. Furthermore, the use of neurons capable of self-regulating their fire responsivity as a function of the PCM internal state enables the design of dynamic networks. In this scenario, we propose to use the PCM-based neurons to design bio-inspired recurrent networks for autonomous decision making in navigation tasks. The agent relies on neuronal spike-frequency adaptation (SFA) to explore the environment via penalties and rewards. Finally, we show that the conductance drift of the PCM devices, contrarily to the applications in neural network accelerators, can improve the overall energy efficiency of neuromorphic computing by implementing bio-plausible active forgetting.


2013 ◽  
Author(s):  
Clare Thiem ◽  
Bryant Wysocki ◽  
Morgan Bishop ◽  
Nathan McDonald ◽  
James Bohl

2014 ◽  
Author(s):  
Bryant Wysocki ◽  
Nathan McDonald ◽  
Clare Thiem ◽  
Thomas Renz ◽  
James Bohl

2021 ◽  
Vol 42 (1) ◽  
pp. 010301
Author(s):  
Yanghao Wang ◽  
Yuchao Yang ◽  
Yue Hao ◽  
Ru Huang

ACS Nano ◽  
2020 ◽  
Author(s):  
Ya-Xin Hou ◽  
Yi Li ◽  
Zhi-Cheng Zhang ◽  
Jia-Qiang Li ◽  
De-Han Qi ◽  
...  

2021 ◽  
Author(s):  
Tao Zeng ◽  
Zhi Yang ◽  
Jiabing Liang ◽  
Ya Lin ◽  
Yankun Cheng ◽  
...  

Memristive devices are widely recognized as promising hardware implementations of neuromorphic computing. Herein, a flexible and transparent memristive synapse based on polyvinylpyrrolidone (PVP)/N-doped carbon quantum dot (NCQD) nanocomposites through regulating...


2021 ◽  
pp. 100393
Author(s):  
Bai Sun ◽  
Tao Guo ◽  
Guangdong Zhou ◽  
Shubham Ranjan ◽  
Yixuan Jiao ◽  
...  

2021 ◽  
pp. 2103672
Author(s):  
Jing Zhou ◽  
Tieyang Zhao ◽  
Xinyu Shu ◽  
Liang Liu ◽  
Weinan Lin ◽  
...  

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Batyrbek Alimkhanuly ◽  
Joon Sohn ◽  
Ik-Joon Chang ◽  
Seunghyun Lee

AbstractRecent studies on neural network quantization have demonstrated a beneficial compromise between accuracy, computation rate, and architecture size. Implementing a 3D Vertical RRAM (VRRAM) array accompanied by device scaling may further improve such networks’ density and energy consumption. Individual device design, optimized interconnects, and careful material selection are key factors determining the overall computation performance. In this work, the impact of replacing conventional devices with microfabricated, graphene-based VRRAM is investigated for circuit and algorithmic levels. By exploiting a sub-nm thin 2D material, the VRRAM array demonstrates an improved read/write margins and read inaccuracy level for the weighted-sum procedure. Moreover, energy consumption is significantly reduced in array programming operations. Finally, an XNOR logic-inspired architecture designed to integrate 1-bit ternary precision synaptic weights into graphene-based VRRAM is introduced. Simulations on VRRAM with metal and graphene word-planes demonstrate 83.5 and 94.1% recognition accuracy, respectively, denoting the importance of material innovation in neuromorphic computing.


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