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Room-temperature memory operation of AlGaAs/GaAs high electron mobility transistors with InAs quantum dots embedded in the channel
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)
◽
10.1109/iedm.2000.904392
◽
2002
◽
Author(s):
Jae-Eung Oh
◽
Jong-Wook Kim
Keyword(s):
Quantum Dots
◽
Electron Mobility
◽
Room Temperature
◽
High Electron Mobility Transistors
◽
High Electron
◽
Inas Quantum Dots
◽
High Electron Mobility
◽
Electron Mobility Transistors
Download Full-text
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10.1063/1.3596440
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Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement
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Electron Mobility
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High Electron
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High Electron Mobility
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Electron Mobility Transistors
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Transient Capacitance
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Publisher’s Note: “Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement” [AIP Advances 6, 095021 (2016)]
AIP Advances
◽
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◽
2016
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Electron Mobility
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Room Temperature
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High Electron Mobility Transistors
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Capacitance Measurement
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High Electron
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High Electron Mobility
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Electron Mobility Transistors
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Temperature Transient
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Transient Capacitance
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Precise determination of indium composition and channel thickness in pseudomorphic high electron mobility transistors using room temperature photoluminescence
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10.1063/1.370823
◽
1999
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pp. 914-917
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Author(s):
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◽
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Room Temperature
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High Electron Mobility Transistors
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Precise Determination
◽
High Electron
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High Electron Mobility
◽
Room Temperature Photoluminescence
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Electron Mobility Transistors
◽
Channel Thickness
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Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors
35th International Conference on Infrared, Millimeter, and Terahertz Waves
◽
10.1109/icimw.2010.5612620
◽
2010
◽
Author(s):
N. Dyakonova
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A. El Fatimy
◽
Y. Meziani
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T. Otsuji
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Room Temperature
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High Electron Mobility Transistors
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High Electron
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High Electron Mobility
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Determination of carbon-related trap energy level in (Al)GaN buffers for high electron mobility transistors through a room-temperature approach
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Author(s):
Xin Chen
◽
Yaozong Zhong
◽
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◽
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◽
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Energy Level
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Electron Mobility
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Room Temperature
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High Electron Mobility Transistors
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Trap Energy
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High Electron Mobility
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AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources
Journal of Applied Physics
◽
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Electron Mobility
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Room Temperature
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High Electron Mobility Transistors
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High Electron
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Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕GaN high electron mobility transistors
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◽
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Room Temperature
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Drain Current
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High Electron Mobility Transistors
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High Electron
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High Electron Mobility
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Electron Mobility Transistors
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Room temperature terahertz emission from plasmon-resonant high-electron mobility transistors stimulated by optical signals
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High Electron Mobility Transistors
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High Electron
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Terahertz Emission
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High Electron Mobility
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Optical Signals
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InP- and GaAs-Based Plasmonic High-Electron-Mobility Transistors for Room-Temperature Ultrahigh-Sensitive Terahertz Sensing and Imaging
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◽
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Room Temperature
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High Electron Mobility Transistors
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High Electron
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High Electron Mobility
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Electron Mobility Transistors
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Terahertz Sensing
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