InP/ZnS quantum dots functionalized AlGaAs/InGaAs open gate high electron mobility transistor

2018 ◽  
Vol 29 (12) ◽  
pp. 10663-10668 ◽  
Author(s):  
Dongyan Zhang ◽  
Zhimin Li
Keyword(s):  
Quantum Dots ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

Quantum Dots-Sensitized High Electron Mobility Transistor (HEMT) for Room-Temperature Gas Detection

2020 ◽  
Vol MA2020-01 (31) ◽  
pp. 2319-2319
Author(s):  
Zhixiang Hu ◽  
Jingyao Liu ◽  
Licheng Zhou ◽  
Long Li ◽  
Yunong Zhao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Mobility ◽  
Room Temperature ◽  
High Electron Mobility Transistor ◽  
Gas Detection ◽  
High Electron ◽  
High Electron Mobility

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer

Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application

2006 ◽  
Vol 45 (No. 35) ◽  
pp. L932-L934 ◽  
Author(s):  
Li-Hsin Chu ◽  
Heng-Tung Hsu ◽  
Edward-Yi Chang ◽  
Tser-Lung Lee ◽  
Sze-Hung Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode
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