Growth and Film Properties of Plasma-Enhanced and Thermal Atomic-Layer-Deposited Magnesium Oxide Films Using Bis(ethylcyclopentadienyl)Magnesium Precursor

Abstract Oxide films on stainless steels have been classified into three types according to film thickness, film structure, film composition, and influence of the film on resistance to corrosion. Compositional properties of oxide films isolated from surfaces of stainless steels were studied using specially developed microanalytical techniques. Properties of passive films on stainless steel were evaluated and the effects of alloy composition and surface treatment on other types of films on Types 304, 316, and 347 stainless steels were studied. The influence of corrosion in various media was correlated with film compositional properties. Composition of films after immersion in acids was found to be related to film composition prior to immersion. The effect of immersion depended on the nature and intensity of corrosion and was reflected most sensitively by the iron and silicon contents of the films. The conclusion was made that film properties indicate strongly the capacity of austenitic stainless alloys to develop corrosion-resistant surfaces in certain environments.

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Investigation of Antimony Oxide Films Deposited by Atomic Layer Deposition

ECS Meeting Abstracts ◽

10.1149/ma2012-01/16/720 ◽

2012 ◽

Keyword(s):

Atomic Layer Deposition ◽

Oxide Films ◽

Atomic Layer ◽

Antimony Oxide ◽

Layer Deposition

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Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen

Journal of Applied Physics ◽

10.1063/1.1515107 ◽

2002 ◽

Vol 92 (10) ◽

pp. 5698-5703 ◽

Cited By ~ 49

Author(s):

Kaupo Kukli ◽

Mikko Ritala ◽

Jonas Sundqvist ◽

Jaan Aarik ◽

Jun Lu ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Hafnium Oxide ◽

Oxide Films ◽

Atomic Layer ◽

Layer Deposition

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Atomic Layer Deposition of Gallium-Doped Zinc Oxide Transparent Conducting Oxide films

MRS Proceedings ◽

10.1557/opl.2011.711 ◽

2011 ◽

Vol 1315 ◽

Cited By ~ 4

Author(s):

Paul R. Chalker ◽

Paul A. Marshall ◽

Simon Romani ◽

Matthew J. Rosseinsky ◽

Simon Rushworth ◽

...

Keyword(s):

Zinc Oxide ◽

Atomic Layer Deposition ◽

Film Thickness ◽

Transparent Conducting Oxide ◽

Oxide Films ◽

Atomic Layer ◽

Contactless Measurement ◽

Zinc Oxide Films ◽

Transparent Conducting ◽

Layer Deposition

ABSTRACTThin transparent conducting oxide (TCO) films of gallium-doped zinc oxide have been deposited on glass substrates by atomic layer deposition (ALD) using diethyl zinc, triethyl gallium and water vapour as precursors. The gallium-doped zinc oxide films were deposited over the temperature range 100-350°C. Transmission electron microscopy reveals that the as-deposited films are polycrystalline in character. The electrical resistivity of the gallium-doped zinc oxide films was evaluated using four-point probe and contactless measurement methods as a function of film thickness. The lowest sheet resistance of 16 Ω/☐ was measured from a film thickness of 400nm and a gallium content of 5 atomic percent. The electron Hall mobility of this film was 12.3 cm2/Vs. The visible transmittance of the films was 78% with a haze of 0.2%.

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