Explanation of the Non-Linear Electrical Behavior of a Resistive NOx Dosimeter By Operando DRIFT Spectroscopy

2021 ◽  
Vol MA2021-01 (56) ◽  
pp. 1503-1503
Author(s):  
Daniela Schoenauer-Kamin ◽  
Ralf Moos
2013 ◽  
Vol 39 (6) ◽  
pp. 6063-6068 ◽  
Author(s):  
Yanmin Huang ◽  
Laijun Liu ◽  
Danping Shi ◽  
Shuangshuang Wu ◽  
Shaoying Zheng ◽  
...  

2008 ◽  
Vol 23 (1) ◽  
pp. 62-66 ◽  
Author(s):  
Marco Peiteado ◽  
Miguel Angel De la Rubia ◽  
José De Frutos ◽  
Teresa Jardiel

Vacuum ◽  
2017 ◽  
Vol 146 ◽  
pp. 422-429 ◽  
Author(s):  
Prashant K. Sarswat ◽  
Pankaj Kumar ◽  
Sayan Sarkar ◽  
Michael L. Free

1967 ◽  
Vol 28 ◽  
pp. 105-176
Author(s):  
Robert F. Christy

(Ed. note: The custom in these Symposia has been to have a summary-introductory presentation which lasts about 1 to 1.5 hours, during which discussion from the floor is minor and usually directed at technical clarification. The remainder of the session is then devoted to discussion of the whole subject, oriented around the summary-introduction. The preceding session, I-A, at Nice, followed this pattern. Christy suggested that we might experiment in his presentation with a much more informal approach, allowing considerable discussion of the points raised in the summary-introduction during its presentation, with perhaps the entire morning spent in this way, reserving the afternoon session for discussion only. At Varenna, in the Fourth Symposium, several of the summaryintroductory papers presented from the astronomical viewpoint had been so full of concepts unfamiliar to a number of the aerodynamicists-physicists present, that a major part of the following discussion session had been devoted to simply clarifying concepts and then repeating a considerable amount of what had been summarized. So, always looking for alternatives which help to increase the understanding between the different disciplines by introducing clarification of concept as expeditiously as possible, we tried Christy's suggestion. Thus you will find the pattern of the following different from that in session I-A. I am much indebted to Christy for extensive collaboration in editing the resulting combined presentation and discussion. As always, however, I have taken upon myself the responsibility for the final editing, and so all shortcomings are on my head.)


Author(s):  
N.-H. Cho ◽  
S. McKernan ◽  
C.B. Carter ◽  
K. Wagner

Interest has recently increased in the possibility of growing III-V compounds epitactically on non-polar substrates to produce device quality material. Antiphase boundaries (APBs) may then develop in the GaAs epilayer because it has sphalerite structure (face-centered cubic with a two-atom basis). This planar defect may then influence the electrical behavior of the GaAs epilayer. The orientation of APBs and their propagation into GaAs epilayers have been investigated experimentally using both flat-on and cross-section transmission electron microscope techniques. APBs parallel to (110) plane have been viewed at the atomic resolution and compared to simulated images.Antiphase boundaries were observed in GaAs epilayers grown on (001) Ge substrates. In the image shown in Fig.1, which was obtained from a flat-on sample, the (110) APB planes can be seen end-on; the faceted APB is visible because of the stacking fault-like fringes arising from a lattice translation at this interface.


Optimization ◽  
1975 ◽  
Vol 6 (4) ◽  
pp. 549-559
Author(s):  
L. Gerencsér

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