Assessment of Multiple Epilayer III-V Compound Semi-Conductors by Synchrotron Radiation Diffractometry

1985 ◽  
Vol 29 ◽  
pp. 345-352 ◽  
Author(s):  
D. K. Bowen ◽  
S.T. Davies ◽  
S. Swaminathan

An extensive programme of characterization of optoelectronic device material has been performed at the Synchrotron Radiation Source, Baresbury Laboratory, in collaboration with Plessey Research, Caswell. The material was grown by Plessey Research by liquid phase epitaxy on InP substrates and had quaternary active layers with, usually, four epilayers in total. Some specimens had graded epilayers. This paper reports use of the methods of double crystal topography, rocking curve analysis and simulation, selective etching and Talysurf measurement in order to develop and assess non-destructive methods of evaluation. The destructive methods above were therefore used in order to test and verify the non-destructive X-ray techniques.

1995 ◽  
Vol 148 (1-2) ◽  
pp. 31-34 ◽  
Author(s):  
Haiyan An ◽  
Ming Li ◽  
Shuren Yang ◽  
Zhenhong Mai ◽  
Shiyong Liu

1986 ◽  
Vol 30 ◽  
pp. 527-535 ◽  
Author(s):  
T.S. Ananthanarayanan ◽  
W.E. Mayo ◽  
R.G. Rosemeier

AbstractThis study presents a unique and novel enhancement of the double crystal diffractometer which allows topographic mapping of X-ray diffraction rocking curve half widths at about 100-150μm spatial resolution. This technique can be very effectively utilized to map micro-lattice strain fields in crystalline materials. The current focus will be on the application of a recently developed digital implementation for the rapid characterization of defect structure and distribution in various semiconductor materials.Digital Automated Rocking Curve (DARC) topography has been successfully applied for characterizing defect structure in materials such as: GaAs, Si, AlGaAs, HgMnTe, HgCdTe, CdTe, Al, Inconnel, Steels, BaF2 PbS, PbSe, etc. The non-intrusive (non- contact & non-destructive) nature of the DARC technique allows its use in studing several phenomena such as corrosion fatigue, recrystallization, grain growth, etc., in situ. DARC topography has been used for isolating regions of non-uniform dislocation density on various materials. It is envisioned that this highly sophisticated, yet simple to operate, system will improve semiconductor-device yield significantly.The high strain sensitivity of the technique results from combination of the highly monochromated and collimated X-ray probe beani, the State of the art linear position-sensitive detector (LPSD) and the high-precision specimen goniometer.


Lithos ◽  
2016 ◽  
Vol 265 ◽  
pp. 182-198 ◽  
Author(s):  
M.P.A.C. Borges ◽  
M.A. Moura ◽  
S.L.R. Lenharo ◽  
C.B. Smith ◽  
D.P. Araujo

2016 ◽  
Author(s):  
Yan Liu ◽  
Junliang Tao ◽  
Xinbao Yu ◽  
Zhen Liu ◽  
Xiong (Bill) Yu

1987 ◽  
Vol 31 ◽  
pp. 403-408
Author(s):  
Robert W. Green

X-ray characterization of single crystal materials in the form of thin layers can be accomplished with the use of a double crystal diffractometer. The resultant rocking curve is a convolution of the Bragg reflection from both the first and second crystals. The width of the rocking curve at half-height is a measure of the crystal perfection of a materiel. Since the FWHM for the material being analyzed cannot be less than that of the first crystal (Monochromator), the first crystal should be of very good crystal quality. The problem that arises with the two crystal parallel configuration (Fig. 1) is that the monochromator crystal must be changed each time a material of different orientation or stoichiometry with different resultant lattice constants is analyzed. This requires changing the monochromator and re-aligning the double crystal diffractometer.


Sign in / Sign up

Export Citation Format

Share Document