High Resolution Digital X-Ray Rocking Curve Topography

1986 ◽  
Vol 30 ◽  
pp. 527-535 ◽  
Author(s):  
T.S. Ananthanarayanan ◽  
W.E. Mayo ◽  
R.G. Rosemeier
Keyword(s):  
Defect Structure ◽  
Semiconductor Device ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Rocking Curve ◽  
Crystalline Materials ◽  
Digital Implementation ◽  
X Ray ◽  
Rapid Characterization ◽  
Non Destructive

AbstractThis study presents a unique and novel enhancement of the double crystal diffractometer which allows topographic mapping of X-ray diffraction rocking curve half widths at about 100-150μm spatial resolution. This technique can be very effectively utilized to map micro-lattice strain fields in crystalline materials. The current focus will be on the application of a recently developed digital implementation for the rapid characterization of defect structure and distribution in various semiconductor materials.Digital Automated Rocking Curve (DARC) topography has been successfully applied for characterizing defect structure in materials such as: GaAs, Si, AlGaAs, HgMnTe, HgCdTe, CdTe, Al, Inconnel, Steels, BaF2 PbS, PbSe, etc. The non-intrusive (non- contact & non-destructive) nature of the DARC technique allows its use in studing several phenomena such as corrosion fatigue, recrystallization, grain growth, etc., in situ. DARC topography has been used for isolating regions of non-uniform dislocation density on various materials. It is envisioned that this highly sophisticated, yet simple to operate, system will improve semiconductor-device yield significantly.The high strain sensitivity of the technique results from combination of the highly monochromated and collimated X-ray probe beani, the State of the art linear position-sensitive detector (LPSD) and the high-precision specimen goniometer.

TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE

1999 ◽  
Vol 595 ◽  
Author(s):  
W.L. Sarney ◽  
L. Salamanca-Riba ◽  
V. Ramachandran ◽  
R.M Feenstra ◽  
D.W. Greve
Keyword(s):  
Low Temperatures ◽  
Stacking Faults ◽  
Full Width ◽  
X Ray Diffraction ◽  
High Quality ◽  
Double Crystal ◽  
Tem Analysis ◽  
Rocking Curve ◽  
X Ray ◽  
Substrate Temperatures

AbstractGaN films grown on SiC (0001) by MBE at various substrate temperatures (600° - 750° C) were characterized by RHEED, STM, x-ray diffraction, AFM and TEM. This work focuses on the TEM analysis of the films' features, such as stacking faults and dislocations, which are related to the substrate temperature. There are several basal plane stacking faults in the form of cubic inclusions for samples grown at low temperatures compared to those grown at high temperatures. The dislocation density is greatest for the film grown at 600°C, and it steadily decreases with increasing growth temperatures. Despite the presence of various defects, x-ray analysis shows that the GaN films are of high quality. The double crystal rocking curve full width at half maximum (FWHM) for the GaN (0002) peak is less than 2 arc-minutes for all of the films we measured and it decreases with increasing growth temperature.

CdTe Films Grown on InSb Substrates by Organometallic Epitaxy

1986 ◽  
Vol 90 ◽  
Author(s):  
I. B. Bhat ◽  
N. R. Taskar ◽  
J. Ayers ◽  
K. Patel ◽  
S. K. Ghandhi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Cdte Films ◽  
Secondary Ion ◽  
Cdte Growth

ABSTRACTCadmium telluride layers were grown on InSb substrates by organometallic vapor phase epitaxy and examined using secondary ion mass spectrometry (SIMS), photoluminescence (Pb) and double crystal x-ray diffraction (DCD). The substrate temperature and the nature of the surface prior to growth are shown to be the most important parameters which influence the quality of CdTe layers. Growth on diethyltelluride (DETe) stabilized InSb substrates resulted in CdTe growth with a misorientation of about 4 minutes of arc with respect to the substrates. On the other hand, the grown layers followed the orientation of the substrates when a dimethylcadmium (DMCd) stabilized InSb was used. Growth at 350°C resulted in the smallest x-ray rocking curve (DCRC) full width at half maximum (FWHM) of about 20 arc seconds.

X-Ray Characterisation of Boron Delta Layers in Si and SiGe

1991 ◽  
Vol 220 ◽  
Author(s):  
A. R. Powell ◽  
R. A. Kubiak ◽  
T. E. Whall ◽  
E. H. C. Parker ◽  
D. K. Bowen
Keyword(s):  
High Temperature ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Carrier Confinement ◽  
Delta Layer ◽  
Non Destructive ◽  
Sheet Density

ABSTRACTWe demonstrate the growth, by MBE, of high sheet density B delta layers in both Si and SiGe epitaxial layers. Double Crystal X-Ray Diffraction is shown to be a non-destructive method of characterising the width of very narrow (0.3 nm) delta layers and the sheet density of the activated B. The ability of delta layers to withstand high temperature anneals is considered and it is found that a 750 °C anneal for 1 hour broadens the delta layer to beyond the width required for carrier confinement.

X-Ray Rocking Curve Analysis of S-Implanted GaAs

1988 ◽  
Vol 126 ◽  
Author(s):  
M. Fatemi ◽  
P.E. Thompson ◽  
J. Chaudhuri ◽  
S. Shah
Keyword(s):  
Thin Film ◽  
Curve Analysis ◽  
Maximum Strain ◽  
Major Peak ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Positive Strain ◽  
Two Peaks

ABSTRACTThe effect of rapid thermal annealing on strain reduction in 1.15 MeV S-implanted GaAs wafers irradiated to a dose of 5 × 1014/cm2 has been studied by double-crystal x-ray diffraction technique. X-ray rocking curves exhibit characteristic thin film fringes between the peak of unstrained GaAs and the major peak of the strained region. The maximum strain, i.e., the separation between the two peaks, as well as the number of minor fringes decreases with increasing RTA temperature, while the relative spacing between the fringes remains constant. At temperatures above 900°C, the main peaks begin to overlap; however, a residual positive strain can be measured for temperatures as high as 1100°C.

{224} Plane X-Ray Diffraction Study of GaAs on Si Wafers Using a Conventional Double Crystal Diffractometer

1987 ◽  
Vol 91 ◽  
Author(s):  
J.W. Lee ◽  
D.K. Bowen ◽  
J.P. Salerno
Keyword(s):  
Incident Angle ◽  
Wafer Surface ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Near Surface ◽  
Rocking Curve ◽  
X Ray ◽  
Gaas On Si ◽  
Plane Diffraction

ABSTRACTIn an effort to evaluate the near surface crystal quality of GaAs on Si wafers, {224} plane diffraction were investigated using a conventional double crystal x-ray diffractometer without any high intensity radiation source. The x-ray incident angle to wafer surface varied from 3.6 to 9.6 degrees for different {224} planes due to the substrate tilt angle of 3 degrees. The GaAs to Si rocking curve intensity ratio increased significantly as the incident angle decreased. For the diffraction with 3.6 degree incident angle, only the GaAs peak was detected from the 3.5 um thick GaAs on Si wafer and the GaAs peak became narrower. These indicates that this conventional x-ray diffraction technique is applicable for the near surface quality evaluation of GaAs on Si wafers.

Measurement of the Lateral Periodicity of a Quantum Dot Array by Triple Crystal Diffractometry

1993 ◽  
Vol 312 ◽  
Author(s):  
B. Jenichen ◽  
K. Ploog ◽  
O. Brandt
Keyword(s):  
Quantum Dot ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Inas Quantum Dots ◽  
Rocking Curve ◽  
X Ray ◽  
Gaas Matrix ◽  
Scattering Factor ◽  
Inas Quantum Dot ◽  
Kinematical Theory

AbstractThe lateral periodicity of an InAs quantum dot array in a GaAs matrix is measured in the differential rocking curve by triple crystal diffractometry. The quantum dot array was grown by molecular beam epitaxy of submonolayer InAs films on a terraced (001) GaAs substrate. The x-ray diffraction of the array is described in the limits of the kinematical theory. Both the changes in the scattering factor and the tetragonal deformations due to the InAs quantum dots are taken into account. The lateral periodicity of the array along [100] is 8–11nm dependent on the position of the measured region compared with an average of 10nm obtained from the miscut of the sample. In addition the vertical periodicity of the array is measured by comparison of the double crystal rocking curve with the corresponding simulation in the dynamical approximation. The vertical period of the array along [001] is 26.5nm. The coverage of the submonolayer InAs films estimated from the same measurement is 0.4. The absence of plastic relaxation is confirmed by x-ray topography.

scholarly journals Reciprocal Space Analysis of the Microstructure of Luminescent and Nonluminescent Porous Silicon Films

1994 ◽  
Vol 358 ◽  
Author(s):  
S.R. Lee ◽  
J.C. Barbour ◽  
J.W. Medernach ◽  
J.O. Stevenson ◽  
J.S. Custer
Keyword(s):  
Porous Silicon ◽  
Space Structure ◽  
Reciprocal Space ◽  
Silicon Films ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Crystalline Materials ◽  
X Ray ◽  
Space Analysis ◽  
Spatially Correlated

ABSTRACTThe microstructure of anodically prepared porous silicon films was determined using a novel x-ray diffraction technique. This technique uses double-crystal diffractometry combined with position-sensitive x-ray detection to efficiently and quantitatively image the reciprocal space structure of crystalline materials. Reciprocal space analysis of newly prepared, as well as aged, p+ porous silicon films showed that these films exhibit a very broad range of crystallinity. This material appears to range in structure from a strained, single-crystal, sponge-like material exhibiting long-range coherency to isolated, dilated nanocrystals embedded in an amorphous matrix. Reciprocal space analysis of n+ and p+ porous silicon showed these materials are strained single-crystals with a spatially-correlated array of vertical pores. The vertical pores in these crystals may be surrounded by nanoporous or nanocrystalline domains as small as a few nm in size which produce diffuse diffraction indicating their presence. The photoluminescence of these films was examined using 488 nm Ar laser excitation in order to search for possible correlations between photoluminescent intensity and crystalline microstructure.

scholarly journals A Vertically Rotating Double-Crystal X-Ray Spectrometer

1963 ◽  
Vol 7 ◽  
pp. 265-280 ◽  
Author(s):  
M. C. Wittels ◽  
F. A. Sherrill ◽  
A. C. Kimbrough
Keyword(s):  
Precise Measurement ◽  
Diffraction Line ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Line Widths

AbstractA versatile double-crystal X-ray spectrometer has been developed for the precise measurement of X-ray diffraction line widths to tenths of seconds. The device can be employed in either the parallel or antiparallel arrangement for rocking curve studies and can also be used in anomalous X-ray transmission experiments with nearly perfect crystals.A detailed description of the instrument is given as well as some results concerning the Darwin theory of X-ray diffraction line widths and Borrmann effects.

Orientation Dependence of CdTe/Si Grown by MBE

1995 ◽  
Vol 399 ◽  
Author(s):  
L. A. Almeida ◽  
Y. P. Chen ◽  
J. P. Faurie ◽  
David J. Smith ◽  
S.-C. Y. Tsen ◽  
...  
Keyword(s):  
Growth Conditions ◽  
Orientation Dependence ◽  
Structural Defects ◽  
X Ray Diffraction ◽  
Substrate Preparation ◽  
Double Crystal ◽  
Interface Quality ◽  
Rocking Curve ◽  
X Ray ◽  
Transmission Electron

ABSTRACTIn this study CdTe (111)B was grown by molecular beam epitaxy on vicinal Si(001) substrates, with a variety of substrate tilt angles (θ), and tilt directions (φ) relative to [110]. Layer quality, and content of double-domain and microtwin defects were evaluated by double crystal rocking curve (DCRC) full width at half maximum (FWHM) and x-ray diffraction, respectively. Transmission electron microscopy (TEM) was used to study interface quality and the nature of structural defects as a function of epilayer thickness. In the present investigation, substrate preparation and growth conditions, particularly initiation conditions, are correlated with Si (001) tilt. It has been found that oxide desorption processes can depend strongly on θ, especially for larger values of θ (> 4°). Currently, we routinely produce single domain, twin-free CdTe(111)B epilayers on vicinal Si (001) substrates.

Non-Destructive Analysis of Thin III-V Epitaxial Layers Using a Tabletop Double Crystal X-Ray Diffractometer

1990 ◽  
Vol 208 ◽  
Author(s):  
R. N. Sacks
Keyword(s):  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Glancing Angle ◽  
Destructive Analysis ◽  
Excellent Method ◽  
Commercial Software Package ◽  
Non Destructive

ABSTRACTSome of today's most promising and interesting semiconductor devices use only a few thin epitaxial layers of III-V materials, where each layer may be only 100 to 1,000A thick. There is a need for fast, accurate, non-destructive analysis techniques for these structures. Double-crystal x-ray diffraction has proven to be an excellent method for measuring composition, thickness, interface sharpness, and overall crystalline quality of III-V heterostructures. Data is presented on the use of a Bede QC1 automated table-top double-crystal diffractometer for the analysis of (AI,Ga)As, (ln,Ga)As, and GaAs epitaxial layers grown by Molecular Beam Epitaxy (MBE). It is shown that this technique can directly detect and analyze single layers of (In,Ga)As as thin as 200A, and in some cases, can indirectly detect layers of GaAs or (AI,Ga)As as thin as 100A without unusual measures such as glancing angle diffraction. The rocking curve results are compared with values predicted by RHEED intensity oscillation measurements, and with computer simulations using a commercial software package.

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