scholarly journals Large-Area Crystalline Silicon Solar Cell Using Novel Antireflective Nanoabsorber Texturing Surface by Multihollow Cathode Plasma System and Spin-On Doping

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Utpal Gangopadhyay ◽  
Sukhendu Jana ◽  
Sayan Das

We present 11.7% efficient p-type crystalline silicon solar cells with a nanoscale textured surface and no dielectric antireflection coating. We propose nanocrystalline-like textured surface consisting of nanocrystalline columnar structures of diameters from 50 to 100 nm and depth of about 500 nm formed by reactive-ion etching (RIE) in multihollow cathode system. This novel nano textured surface acts as an antireflective absorbing surface of c-Si abbreviate as ARNAB (antireflective nanoabsorber). Light shining on the surface of RIE-etched silicon bounces back and forth between the spikes in such a way that most of it never comes back. Radio frequency (RF) hollow cathode discharge allows an improvement of plasma density by an order of magnitude in comparison to standard RF parallel-plate discharge. Desirable black silicon layer has been achieved when RF power of about 20 Watt per one hollow cathode glow is applied for our multihollow cathode system. The RF power frequency was 13.56 MHz. The antireflection property of ARNAB textured surface has been investigated and compared with wet-textured and PECVD coated silicon samples. Solar cell using low-cost spin-on coating technique has been demonstrated in this paper. We have successfully achieved 11.7% efficient large area (98 cm2) ARNAB textured crystalline silicon solar cell using low-cost spin-on coating (SOD) doping.

2011 ◽  
Vol 328-330 ◽  
pp. 747-750 ◽  
Author(s):  
Dae Young Kong ◽  
Chan Seob Cho ◽  
Jun Hwan Jo ◽  
Bong Hwan Kim ◽  
Jong Hyun Lee

Surface texturing is an important process to enhance light absorption and to improve efficiency of a solar cell. Reactive ion etching (RIE) process is a very effective process and low-cost process, which is applicable during the dry etching processes for thin crystalline silicon solar cells with large areas. In this study, we studied a dry and free mask texturing process on crystalline silicon wafer using SF6/O2plasmas and metal mesh in a RIE system, with special attention to the effect of the metal mesh and RIE conditions on the texture of the silicon surface. In particular, we have found an optimized RIE conditions by increasing the distance between the metal mesh and silicon wafer. We have also found that by increasing the RIE process time, with an optimized SF6/O2ratio, pressure and RF power, it is possible to switch from a random texture, to a nm-size pyramid texture and finally to an um-size pyramid texture. This RIE system textured a crystalline wafer surface that formed about 1~2 μm pyramidal black silicon with 7~10% of reflectivity.


2017 ◽  
Vol 12 (1) ◽  
Author(s):  
Zhi-Quan Zhou ◽  
Fei Hu ◽  
Wen-Jie Zhou ◽  
Hong-Yan Chen ◽  
Lei Ma ◽  
...  

2011 ◽  
Vol 685 ◽  
pp. 26-30 ◽  
Author(s):  
Wei Ying Ou ◽  
Yao Zhang ◽  
Hai Ling Li ◽  
Lei Zhao ◽  
Chun Lan Zhou ◽  
...  

Texturing for mono-crystalline silicon solar cell by chemical anisotropic etching is one of the most important techniques in photovoltaic industry. In recent years, tetramethylammonium hydroxide (TMAH) solution or a mixture of TMAH solution with IPA was reported to be used for random pyramids texturization on silicon surface due to its non-volatile, nontoxic, good anisotropic etching characteristics and uncontaminated metal ions. However, most of the studies were reported about the etching processes by using high TMAH concentration solutions. In this study, a simple and cost-effective approach for texturing mono-crystalline silicon wafers in low TMAH concentration solutions was proposed. Etching was performed on (100) silicon wafers using silicon-dissolved tetramethylammonium hydroxide (TMAH) solutions (0.5~1 %) without addition of surfactant. The surface phenomena, surface morphology and surface reflectance have been analyzed. A textured surface with smaller and smooth pyramids can be realized by using 1 % silicon-dissolved TMAH solutions.


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