scholarly journals Cu-Doped-CdS/In-Doped-CdS Cosensitized Quantum Dot Solar Cells

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Lin Li ◽  
Xiaoping Zou ◽  
Hongquan Zhou ◽  
Gongqing Teng

Cu-doped-CdS and In-doped-CdS cosensitized (Cu-doped-CdS/In-doped-CdS) quantum dot solar cells (QDSCs) are introduced here. Different cosensitized sequences, doping ratios, and the thickness (SILAR cycles) of Cu-doped-CdS and In-doped-CdS are discussed. Compared with undoped CdS QDSCs, the short circuit current density, UV-Vis absorption spectra, IPCE (monochromatic incident photon-to-electron conversion), open circuit voltage, and so on are all improved. The photoelectric conversion efficiency has obviously improved from 0.71% to 1.28%.

2015 ◽  
Vol 2015 ◽  
pp. 1-4
Author(s):  
Xiaojun Zhu ◽  
Xiaoping Zou ◽  
Hongquan Zhou

We use the successive ionic layer adsorption and reaction (SILAR) method for the preparation of quantum dot sensitized solar cells, to improve the performance of solar cells by doping quantum dots. We tested the UV-Vis absorption spectrum of undoped CdS QDSCs and Cu doped CdS QDSCs with different doping ratios. The doping ratios of copper were 1 : 100, 1 : 500, and 1 : 1000, respectively. The experimental results show that, under the same SILAR cycle number, Cu doped CdS quantum dot sensitized solar cells have higher open circuit voltage, short circuit current density photoelectric conversion efficiency than undoped CdS quantum dots sensitized solar cells. Refinement of Cu doping ratio are 1 : 10, 1 : 100, 1 : 200, 1 : 500, and 1 : 1000. When the proportion of Cu and CdS is 1 : 10, all the parameters of the QDSCs reach the minimum value, and, with the decrease of the proportion, the short circuit current density, open circuit voltage, and the photoelectric conversion efficiency are all increased. When proportion is 1 : 500, all parameters reach the maximum values. While with further reduction of the doping ratio of Cu, the parameters of QDSCs have a decline tendency. The results showed that, in a certain range, the lower the doping ratio of Cu, the better the performance of quantum dot sensitized solar cell.


Nanoscale ◽  
2016 ◽  
Vol 8 (13) ◽  
pp. 7248-7256 ◽  
Author(s):  
A. Varghese ◽  
M. Yakimov ◽  
V. Tokranov ◽  
V. Mitin ◽  
K. Sablon ◽  
...  

The quantum dot solar cell with nanoengineered suppression of photoelectron capture show the same open circuit voltage as the GaAs reference cell together with some improvements in the short circuit current.


2021 ◽  
Vol 11 (21) ◽  
pp. 10494
Author(s):  
Xiaolan Wang ◽  
Xiaoping Zou ◽  
Jialin Zhu ◽  
Chunqian Zhang ◽  
Jin Cheng ◽  
...  

The depolarization field of ferroelectric photovoltaic materials can enhance the separation and transport of photogenerated carriers, which will improve the performance of photovoltaic devices, thus attracting the attention of researchers. In this paper, a narrow bandgap molecular ferroelectric Hexane-1,6-diammonium pentaiodobismuth (HDA-BiI5) was selected as the photo absorption layer for the fabrication of solar cells. After optimizing the ferroelectric thin film by the antisolvent process, the effect of different polarization voltages on the performance of ferroelectric devices was studied. The results showed that there was a significant increase in short-circuit current density, and the photoelectric conversion efficiency showed an overall increasing trend. Finally, we analyzed the internal mechanism of the effect of polarization on the device.


2020 ◽  
Vol 13 (06) ◽  
pp. 2050028
Author(s):  
Tianyu Guo ◽  
Hui Zhang ◽  
Guifeng Chen ◽  
Boling Long ◽  
Luxiao Xie ◽  
...  

I–III–VI chalcopyrite copper indium selenium is one of therepresentatives of the light absorbing layer material, and is often used for a thin-film solar cell. With the development of nano-technology, CuInSe2 quantum dots (CISe QDs) which have intermediate belt and excitation effect characteristics are applied to the solar cells as an alternative of Cd- or S-based QDs. Most conventional methods for the synthesis of CISe QDs using solution involve the dangerous and environmentally unfriendly Oleylamine or phosphine coordination compounds. In this work, CISe QDs were synthesized by a green, safe and low-temperature method in triethylene glycol. Through controlling the growth temperature and time, the diameter can be adjusted from 3[Formula: see text]nm to 10[Formula: see text]nm. The samples exhibit quantum confinement effect, and have a controllable optical band gap. QDs were deposited on the surface of ZnO nanorods to obtain a photoanode, which were fabricated into quantum dot-sensitized solar cells. The device exhibits size-dependent performance. And the open circuit voltage shows a fluctuation up to 0.26[Formula: see text]V. When the size is 4[Formula: see text]nm, the short circuit current density is the largest (15[Formula: see text]mA/cm2).


Energies ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1684
Author(s):  
Alessandro Romeo ◽  
Elisa Artegiani

CdTe is a very robust and chemically stable material and for this reason its related solar cell thin film photovoltaic technology is now the only thin film technology in the first 10 top producers in the world. CdTe has an optimum band gap for the Schockley-Queisser limit and could deliver very high efficiencies as single junction device of more than 32%, with an open circuit voltage of 1 V and a short circuit current density exceeding 30 mA/cm2. CdTe solar cells were introduced at the beginning of the 70s and they have been studied and implemented particularly in the last 30 years. The strong improvement in efficiency in the last 5 years was obtained by a new redesign of the CdTe solar cell device reaching a single solar cell efficiency of 22.1% and a module efficiency of 19%. In this paper we describe the fabrication process following the history of the solar cell as it was developed in the early years up to the latest development and changes. Moreover the paper also presents future possible alternative absorbers and discusses the only apparently controversial environmental impacts of this fantastic technology.


Energies ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4268
Author(s):  
Jessica de Wild ◽  
Gizem Birant ◽  
Guy Brammertz ◽  
Marc Meuris ◽  
Jef Poortmans ◽  
...  

Ultrathin Cu(In,Ga)Se2 (CIGS) absorber layers of 550 nm were grown on Ag/AlOx stacks. The addition of the stack resulted in solar cells with improved fill factor, open circuit voltage and short circuit current density. The efficiency was increased from 7% to almost 12%. Photoluminescence (PL) and time resolved PL were improved, which was attributed to the passivating properties of AlOx. A current increase of almost 2 mA/cm2 was measured, due to increased light scattering and surface roughness. With time of flight—secondary ion mass spectroscopy, the elemental profiles were measured. It was found that the Ag is incorporated through the whole CIGS layer. Secondary electron microscopic images of the Mo back revealed residuals of the Ag/AlOx stack, which was confirmed by energy dispersive X-ray spectroscopy measurements. It is assumed to induce the increased surface roughness and scattering properties. At the front, large stains are visible for the cells with the Ag/AlOx back contact. An ammonia sulfide etching step was therefore applied on the bare absorber improving the efficiency further to 11.7%. It shows the potential of utilizing an Ag/AlOx stack at the back to improve both electrical and optical properties of ultrathin CIGS solar cells.


Author(s):  
Nur Shakina Mohd Shariff ◽  
Puteri Sarah Mohamad Saad ◽  
Mohamad Rusop Mahmood

There has been an increasing interest towards organic solar cells after the discovery of conjugated polymer and bulk-heterojunction concept. Eventhough organic solar cells are less expensive than inorganic solar cells but the power conversion energy is still considered low. The main objective of this research is to investigate the effect of the P3HT’s thickness and concentration towards the efficiency of the P3HT:Graphene solar cells. A simulation software that is specialize for photovoltaic called SCAPS is used in this research to simulate the effect on the solar cells. The solar cell’s structure will be drawn inside the simulation and the parameters for each layers is inserted. The result such as the open circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF), efficiency (η), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristic will be calculated by the software and all the results will be put into one graph.


Energies ◽  
2020 ◽  
Vol 13 (2) ◽  
pp. 450 ◽  
Author(s):  
Miron Krassas ◽  
Christos Polyzoidis ◽  
Pavlos Tzourmpakis ◽  
Dimitriοs M. Kosmidis ◽  
George Viskadouros ◽  
...  

A conjugated, ladder-type multi-fused ring 4,7-dithienbenzothiadiazole:thiophene derivative, named as compound ‘T’, was for the first time incorporated, within the PTB7:PC71BM photoactive layer for inverted ternary organic solar cells (TOSCs) realization. The effective energy level offset caused by compound T between the polymeric donor and fullerene acceptor materials, as well as its resulting potential as electron cascade material contribute to an enhanced exciton dissociation, electron transfer facilitator and thus improved overall photovoltaic performance. The engineering optimization of the inverted TOSC, ITO/PFN/PTB7:Compound T(5% v/v):PC71BM/MoO3/Al, resulted in an overall power conversion efficiency (PCE) of 8.34%, with a short-circuit current density (Jsc) of 16.75 mA cm−2, open-circuit voltage (Voc) of 0.74 V and a fill factor (FF) of 68.1%, under AM1.5G illumination. This photovoltaic performance was improved by approximately 12% with respect to the control binary device.


2011 ◽  
Vol 378-379 ◽  
pp. 601-605 ◽  
Author(s):  
Saleh N. Alamri ◽  
M. S. Benghanem ◽  
A. A. Joraid

This study investigates the preparation of the three main layers of a CdS/CdTe thin film solar cell using a single vacuum system. A Close Space Sublimation System was constructed to deposit CdS, CdTe and CdCl2 solar cell layers. Two hot plates were used to heat the source and the substrate. Three fused silica melting dishes were used as containers for the sources. The properties of the deposited CdS and CdTe films were determined via Atomic force microscopy, scanning electron microscopy, X-ray diffraction and optical transmission spectroscopy. An J-V characterization of the fabricated CdS/CdTe solar cells was performed under solar radiation. The short-circuit current density, Jsc, the open-circuit voltage, Voc, fill factor, FF and conversion efficiency, η, were measured and yielded values of 27 mA/cm2, 0.619 V, 58% and 9.8%, respectively.


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