Design of Wideband Dual-Polarized Planar Antenna Using Multimode Concept

A wideband dual-polarized planar antenna is designed and analyzed by using the theory of characteristic modes (TCM). The eigenvalue, eigencurrent, characteristic pattern, and modal weighting coefficient are analyzed to bring physical insight to this kind of antenna. The results demonstrate that there are two modes resonant in the operating band for each polarization, which have been combined to form a wider frequency band. A bandwidth of 60.2% (1.72–3.2 GHz) for VSWR < 1.5 with high isolation of 32 dB is achieved simultaneously. The size of the radiator structure is 0.33λ0× 0.33λ0× 0.22λ0(λ0refers to the center operating frequency).

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Dual-Polarized Omnidirectional Antenna With High Isolation Based on the Theory of Characteristic Modes

IEEE Access ◽

10.1109/access.2018.2883323 ◽

2018 ◽

Vol 6 ◽

pp. 73416-73422

Author(s):

Xi Wang Dai ◽

Guo Qing Luo ◽

Ya Hui Qian ◽

Xiao Hong Zhang ◽

Hua Yan Jin ◽

...

Keyword(s):

High Isolation ◽

Omnidirectional Antenna ◽

Characteristic Modes ◽

Dual Polarized

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A Compact MIMO Antenna with Inverted C-Shaped Ground Branches for Mobile Terminals

International Journal of Antennas and Propagation ◽

10.1155/2016/3080563 ◽

2016 ◽

Vol 2016 ◽

pp. 1-6 ◽

Cited By ~ 3

Author(s):

Zixian Yang ◽

Hongchun Yang ◽

Haijuan Cui

Keyword(s):

Correlation Coefficient ◽

Impedance Bandwidth ◽

Antenna Element ◽

Planar Antenna ◽

Mobile Terminals ◽

Mimo Antenna ◽

High Isolation ◽

Operating Band ◽

Measured Radiation ◽

Envelope Correlation

A compact printed MIMO antenna for mobile terminals is presented. With two planar antenna elements, the −6 dB impedance bandwidth of 2.32 GHz (1.48–3.8 GHz) is obtained, which covers GSM 1800/1900, UMTS, WLAN, Wimax, S-band, and most of LTE bands. Each antenna element with a small occupation of 15 × 20 mm2consists of a driven strip and a shorted strip. Two inverted C-shaped ground branches are introduced between two elements to improve the isolation. The simulated results are studied and the measured results show that high isolation of more than 18 dB at the entire operating band is achieved. Meanwhile, the impedance performance is also improved by adding the branches. Furthermore, the measured radiation performances and envelope correlation coefficient also demonstrate that the proposed antenna could be a good candidate for mobile terminals.

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High Isolation Dual-Polarized Patch Antenna with Hybrid Ring Feeding

International Journal of Antennas and Propagation ◽

10.1155/2017/6193102 ◽

2017 ◽

Vol 2017 ◽

pp. 1-6 ◽

Cited By ~ 2

Author(s):

Xian-Jing Lin ◽

Ze-Ming Xie ◽

Pei-Sheng Zhang

Keyword(s):

Reflection Coefficient ◽

Patch Antenna ◽

Wide Bandwidth ◽

High Isolation ◽

Operating Band ◽

Feeding Structure ◽

Dual Polarized ◽

Horizontal Substrate ◽

Wide Operating ◽

Hybrid Ring

This paper presents a hybrid ring feeding dual-polarized patch antenna with high isolation in a wide working band. The proposed antenna consists of a circular radiating patch printed on the upper horizontal substrate, two pairs of Γ shaped strips printed on two vertical substrates, and a hybrid ring feeding network printed on the lower two horizontal substrates. The proposed antenna adopts Γ shape strips coupled feeding structure to achieve a wide operating band. Furthermore, a hybrid ring feeding structure with high isolation in a wide bandwidth, which is firstly proposed, is applied as feeding network. When one port is excited, the feeding network can realize twice the power cancellation. Thus, high ports isolation characteristics can be obtained. A prototype of the proposed antenna is fabricated and measured. Measured results show that the 10 dB reflection coefficient bandwidths of the two ports are both about 38.7%, with port isolation higher than 40 dB through most of the band, and the cross-polarizations are below −24 dB.

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A Differentially Driven Dual-Polarized Dual-Wideband Complementary Antenna for 2G/3G/LTE Applications

International Journal of Antennas and Propagation ◽

10.1155/2014/480268 ◽

2014 ◽

Vol 2014 ◽

pp. 1-10 ◽

Cited By ~ 5

Author(s):

Botao Feng ◽

Shufang Li ◽

Wenxing An ◽

Weijun Hong ◽

Sixing Yin

Keyword(s):

Frequency Band ◽

Patch Antenna ◽

Lower Layer ◽

Base Station ◽

Radiation Patterns ◽

Dual Polarization ◽

Lte Networks ◽

High Isolation ◽

Lower Frequency Band ◽

Dual Polarized

A novel differentially driven dual-polarized dual-wideband complementary patch antenna with high isolation is proposed for 2G/3G/LTE applications. In order to generate dual-polarization and dual-wideband properties, a pair of biorthogonal dual-layerη-shaped tapered line feeding structures is utilized to feed two pairs of dual-layer U-shaped patches, respectively. The upper-layer U-shaped patches mainly serve the upper frequency band, while the lower-layer ones chiefly work for the lower frequency band. Besides, a horned reflector is introduced to improve radiation patterns and provide stable gain. The prototype antenna can achieve a bandwidth of 25.7% (0.78 GHz–1.01 GHz) with a stable gain of7.8±0.7 dBi for the lower band, and a bandwidth of 45.7% (1.69 GHz–2.69 GHz) with a gain of9.5±1.1 dBi for the upper band. Input isolation exceeding 30 dB has been obtained in the wide bandwidth. Thus, it can be potentially used as a base station antenna for 2G/3G/LTE networks.

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An E-Band 21-dB Variable-Gain Amplifier with 0.5-V Supply in 40-nm CMOS

Electronics ◽

10.3390/electronics10070804 ◽

2021 ◽

Vol 10 (7) ◽

pp. 804

Author(s):

Gibeom Shin ◽

Kyunghwan Kim ◽

Kangseop Lee ◽

Hyun-Hak Jeong ◽

Ho-Jin Song

Keyword(s):

Power Consumption ◽

Frequency Band ◽

Noise Figure ◽

Complementary Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Operating Frequency ◽

Variable Gain Amplifier ◽

Variable Gain ◽

Operating Frequency Band ◽

Shunt Capacitors

This paper presents a variable-gain amplifier (VGA) in the 68–78 GHz range. To reduce DC power consumption, the drain voltage was set to 0.5 V with competitive performance in the gain and the noise figure. High-Q shunt capacitors were employed at the gate terminal of the core transistors to move input matching points for easy matching with a compact transformer. The four stages amplifier fabricated in 40-nm bulk complementary metal oxide semiconductor (CMOS) showed a peak gain of 24.5 dB at 71.3 GHz and 3‑dB bandwidth of more than 10 GHz in 68–78 GHz range with approximately 4.8-mW power consumption per stage. Gate-bias control of the second stage in which feedback capacitances were neutralized with cross-coupled capacitors allowed us to vary the gain by around 21 dB in the operating frequency band. The noise figure was estimated to be better than 5.9 dB in the operating frequency band from the full electromagnetic (EM) simulation.

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