scholarly journals Numerical Study of Duffing Nonlinearity in the Quantum Dot Embedded Nanomechanical Resonator

2021 ◽  
Vol 2021 ◽  
pp. 1-8
Author(s):  
Yue Wang ◽  
Ghulam Bary ◽  
Riaz Ahmad ◽  
Dameng Yin ◽  
Shiwei Xie ◽  
...  
Keyword(s):  
Probability Distribution ◽  
Quantum Dot ◽  
Electromechanical Coupling ◽  
Electron Tunneling ◽  
Numerical Study ◽  
Planck Equation ◽  
Nanomechanical Resonator ◽  
Single Electron Tunneling ◽  
Average Current ◽  
Position Probability

Geometry, electrostatics, and single-electron tunneling contribute to the nonlinearity in the quantum dot embedded nanomechanical resonator, while “Duffing term” is a kind of mathematics describing the third-order nonlinearity of the system as a whole. We study theoretically the influence of a variation of a mathematical parameter Fuffing term on the actual physical effect. The position probability distribution, the average current, and the displacement fluctuation spectrum with the different Duffing parameter and electromechanical coupling are obtained through numerically calculating the Fokker Planck equation. The mechanical bistability has been described by these quantities under different electromechanical coupling and Duffing parameters. We conclude that the nonlinearities of the nanotube resonator contribute to the mechanical bistability, which induces the asymmetry of the position probability distribution, compresses the current, and softens or stiffens the mechanical resonance frequency as the same as the electromechanical coupling to use it in mechanical engineering.

Competing channels in single-electron tunneling through a quantum dot

1993 ◽  
Vol 71 (24) ◽  
pp. 4019-4022 ◽  
Author(s):  
J. Weis ◽  
R. J. Haug ◽  
K. v. Klitzing ◽  
K. Ploog
Keyword(s):  
Quantum Dot ◽  
Electron Tunneling ◽  
Single Electron ◽  
Single Electron Tunneling

Influence of adiabatically transmitted edge channels on single-electron tunneling through a quantum dot

1992 ◽  
Vol 46 (11) ◽  
pp. 7236-7239 ◽  
Author(s):  
B. W. Alphenaar ◽  
A. A. M. Staring ◽  
H. van Houten ◽  
M. A. A. Mabesoone ◽  
O. J. A. Buyk ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Electron Tunneling ◽  
Single Electron ◽  
Single Electron Tunneling

scholarly journals Optical Detection of Single-Electron Tunneling into a Semiconductor Quantum Dot

2019 ◽  
Vol 122 (24) ◽  
Author(s):  
A. Kurzmann ◽  
P. Stegmann ◽  
J. Kerski ◽  
R. Schott ◽  
A. Ludwig ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Electron Tunneling ◽  
Optical Detection ◽  
Single Electron ◽  
Semiconductor Quantum Dot ◽  
Single Electron Tunneling

Electron Interaction in a Quantum Dot with Hard Wall Confinement Potential

1997 ◽  
Vol 11 (08) ◽  
pp. 1035-1049 ◽  
Author(s):  
A. Matulis ◽  
J. O. Fjærestad ◽  
K. A. Chao
Keyword(s):  
Quantum Dot ◽  
State Energy ◽  
Electron Tunneling ◽  
Numerical Procedure ◽  
Perturbation Series ◽  
Electron Interaction ◽  
Confinement Potential ◽  
Single Electron Tunneling ◽  
Interaction Regime ◽  
Charging Energy

We have investigated the electron interaction energy in a circular quantum dot with hard confinement potential, using a renormalized perturbation series (RPS) approach which interpolates between the perturbation solutions in the weak interaction regime and the asymptotic solutions in the strong interaction regime. The RPS is based on the scaling property of the Hamiltonian, and the numerical procedure is not complicated even when the number of electrons in the dot is not very small. The accuracy of the RPS calculation has been tested with two electrons in a dot, where the RPS ground state energy agrees with the exact numerical solution within 1% relative error. We have performed the RPS calculation for three and four electrons in the dot, from which the Coulomb charging energy is derived. The results suggest the potential application of pillar-shaped quantum dots for single-electron tunneling transistors operating at higher temperatures.

Theory of Single Electron Tunneling through a Quantum Dot Dimer

1997 ◽  
Vol 36 (Part 1, No. 6B) ◽  
pp. 3951-3955 ◽  
Author(s):  
Kiyoshi Kawamura ◽  
Tomosuke Aono
Keyword(s):  
Quantum Dot ◽  
Electron Tunneling ◽  
Single Electron ◽  
Single Electron Tunneling

scholarly journals Coulomb Blockade Effects by Single Electron Tunneling Methods in Cylindrical Dual Gate OLET Configuration

2021 ◽  
Author(s):  
Sandeep Kumar Ojha ◽  
Brijesh Kumar
Keyword(s):  
Quantum Dot ◽  
Coulomb Blockade ◽  
Electron Tunneling ◽  
High Electron ◽  
Nano Structure ◽  
Light Emitting ◽  
Single Electron Tunneling ◽  
Significant Research ◽  
Dual Gate ◽  
Operating Potential

Abstract In the field of nano electronics some nano-structure applications such as quantum dots (QDs), wires, wells and bulks must have distinctive potentials. These crystal structures emerged by an inorganic organic hybrid halide materials which processes in tremendous optoelectronic applications like electroluminescence, photoluminescence quantum yield (93.2%). There is a need of coupling to their surroundings by these structures which can either add or subtract electrons from the electrodes. As per state of the art the significant research efforts in about an isolated quantum dot coupling through tunneling of two leads that is source lead for supply of electrons and a drain lead for removes of electrons and their performances will be offered and discussed in the view for the realization of possible between Dual Gate Cylindrical Organic Light Emitting Transistor (OLET) architectures. In this article we examined the optical as well as electrical characteristics operation of cylindrical Dual Gate OLET (CDGOLET). Last year perovskite quantum dot (PQD) most preferred for the purpose of light-emitting transistors with high brightness of up to 1.432× 104 cd m− 2, high electron mobility’s of up to 14.052 cm2 v− 1 s− 1, and their external quantum efficiencies (EQE) of up to 1.85% operating at a source drain operating potential of 50 V.

Single-electron tunneling through a double quantum dot: The artificial molecule

1996 ◽  
Vol 53 (12) ◽  
pp. 7899-7902 ◽  
Author(s):  
R. H. Blick ◽  
R. J. Haug ◽  
J. Weis ◽  
D. Pfannkuche ◽  
K. v. Klitzing ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Electron Tunneling ◽  
Single Electron ◽  
Double Quantum ◽  
Double Quantum Dot ◽  
Single Electron Tunneling ◽  
Artificial Molecule
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