A 16 nm Robust DG-FinFET Based 10T Static Random-Access Memory Cell Design for Ultra-Low Power Memory Design

2017 ◽  
Vol 9 (12) ◽  
pp. 1022-1028
Author(s):  
Hitesh Pahuja ◽  
Mintu Tyagi ◽  
Sudhakar Panday ◽  
Balwinder Singh
Keyword(s):  
Low Power ◽  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Cell Design ◽  
Access Memory ◽  
Ultra Low Power ◽  
Memory Design

Low‐power data encoding/decoding for energy‐efficient static random access memory design

2019 ◽  
Vol 13 (8) ◽  
pp. 1152-1159
Author(s):  
Ghasem Pasandi ◽  
Kolsoom Mehrabi ◽  
Behzad Ebrahimi ◽  
Sied Mehdi Fakhraei ◽  
Ali Afzali‐Kusha ◽  
...  
Keyword(s):  
Low Power ◽  
Energy Efficient ◽  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Access Memory ◽  
Memory Design ◽  
Data Encoding

Lateral phase change random access memory cell design for low power operation

2006 ◽  
Vol 13 (2) ◽  
pp. 169-172 ◽  
Author(s):  
F. Merget ◽  
D. H. Kim ◽  
P. Haring Bolivar ◽  
H. Kurz
Keyword(s):  
Low Power ◽  
Phase Change ◽  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Cell Design ◽  
Access Memory ◽  
Power Operation
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