Doping Profile Effect of Shallow Emitter Junction in Selective Emitter <I>c</I>-Si Solar Cell with Reactive Ion Etching Etch Back Process

Silicon photovoltaic (PV) roadmaps indicate the reduction of wafer thicknesses and the need for innovation in wafering method and cell processing. Within this framework, Imec proposes the i2-module device [1], i.e. an heterojunction interdigitated back-contact (HJ i-BC) solar module [2] processed on 40-μm thick epitaxial wafers bonded to carriers by means of silicone. In the i2-module concept, the Rear Side (RS) of the solar cell is passivated while the wafer is bonded to the module glass and the influence of the silicone on the passivation process is reduced by an O2 plasma realized in an Reactive Ion Etching (RIE) chamber [3]. In this contribution, the effect of different post-bonding cleaning sequences on the passivation of wafers/silicone/glass stacks treated with an O2 plasma is investigated and a simplified post-bonding cleaning sequence leading to state-of-the-art passivation is proposed.

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Characteristics of Double Texturization by Laser and Reactive Ion Etching for Crystalline Silicon Solar Cell

Korean Journal of Materials Research ◽

10.3740/mrsk.2010.20.12.649 ◽

2010 ◽

Vol 20 (12) ◽

pp. 649-653

Author(s):

Jun-Young Kwon ◽

Kyu-Min Han ◽

Sung-Jin Choi ◽

Hee-Eun Song ◽

Jin-Soo Yoo ◽

...

Keyword(s):

Solar Cell ◽

Silicon Solar Cell ◽

Crystalline Silicon ◽

Reactive Ion Etching ◽

Crystalline Silicon Solar Cell ◽

Ion Etching

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Spectral Response Optimization of Polycrystalline Black Silicon Solar Cell by Reactive Ion Etching Combined with PERC Technology

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) ◽

10.1109/pvsc.2018.8547897 ◽

2018 ◽

Author(s):

Shude Zhang ◽

Hongqiang Qian ◽

Jiaqi Peng ◽

Qingzhu Wei ◽

Zhichun Ni

Keyword(s):

Solar Cell ◽

Silicon Solar Cell ◽

Spectral Response ◽

Reactive Ion Etching ◽

Black Silicon ◽

Ion Etching ◽

Response Optimization

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Large-area multicrystalline silicon solar cell fabrication using reactive ion etching (RIE)

Solar Energy Materials and Solar Cells ◽

10.1016/j.solmat.2010.03.029 ◽

2011 ◽

Vol 95 (1) ◽

pp. 2-6 ◽

Cited By ~ 102

Author(s):

Jinsu Yoo ◽

Gwonjong Yu ◽

Junsin Yi

Keyword(s):

Solar Cell ◽

Silicon Solar Cell ◽

Reactive Ion Etching ◽

Multicrystalline Silicon ◽

Large Area ◽

Ion Etching ◽

Solar Cell Fabrication ◽

Cell Fabrication

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17.6% Conversion Efficiency Multicrystalline Silicon Solar Cells Using the Reactive Ion Etching with the Damage Removal Etching

International Journal of Photoenergy ◽

10.1155/2012/248182 ◽

2012 ◽

Vol 2012 ◽

pp. 1-6 ◽

Cited By ~ 9

Author(s):

Ji-Myung Shim ◽

Hyun-Woo Lee ◽

Kyeong-Yeon Cho ◽

Jae-Keun Seo ◽

Ji-Soo Kim ◽

...

Keyword(s):

Solar Cells ◽

Conversion Efficiency ◽

Short Circuit ◽

Reactive Ion Etching ◽

Open Circuit ◽

Multicrystalline Silicon ◽

Textured Surface ◽

Textured Surfaces ◽

Ion Etching ◽

Selective Emitter

For lower reflectance, we applied a maskless plasma texturing technique using reactive ion etching (RIE) on acidic-textured multicrystalline silicon (mc-Si) wafer. RIE texturing had a deep and narrow textured surface and showed excellent low reflectance. Due to plasma-induced damage, unless the RIE-textured surfaces have the proper damage removal etching (DRE), they have a drop inVocand FF. RIE texturing with a proper DRE had sufficiently higher short circuit current(Isc)than acidic-textured samples without a drop in open circuit voltage(Voc). And in order to improve efficiency of mc-Si solar cell, we applied RIE texturing with optimized DRE condition to selective emitter structure. In comparison with the acidic-textured solar cells, RIE-textured solar cells have above 200 mA absolute gain in Isc. And optimized RIE samples with a DRE by HNO3/HF mixture showed 17.6% conversion efficiency, which were made using an industrial screen printing process with selective emitter structure.

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