Subsurface Damage of Single Crystalline Silicon Carbide in Nanoindentation Tests

2010 ◽  
Vol 10 (11) ◽  
pp. 7808-7811 ◽  
Author(s):  
Jiwang Yan ◽  
Xiaohui Gai ◽  
Hirofumi Harada
Keyword(s):  
Silicon Carbide ◽  
Crystalline Silicon ◽  
Subsurface Damage ◽  
Single Crystalline Silicon ◽  
Single Crystalline

Deposition of diamond films on single crystalline silicon carbide substrates

2020 ◽  
Vol 101 ◽  
pp. 107625
Author(s):  
Debarati Mukherjee ◽  
Filipe Oliveira ◽  
Simone Camargo Trippe ◽  
Shlomo Rotter ◽  
Miguel Neto ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Crystalline Silicon ◽  
Diamond Films ◽  
Single Crystalline Silicon ◽  
Single Crystalline

First-Principles Study of Faceted Single-Crystalline Silicon Carbide Nanowires and Nanotubes

2008 ◽  
Vol 113 (3) ◽  
pp. 856-861 ◽  
Author(s):  
Zhenhai Wang ◽  
Mingwen Zhao ◽  
Tao He ◽  
Xuejuan Zhang ◽  
Zexiao Xi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
First Principles ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
First Principles Study

Research on Process Parameter Effects on Surface Roughness and Subsurface Damage in CMP of Single Crystalline Silicon

2012 ◽  
Vol 472-475 ◽  
pp. 887-892
Author(s):  
Mei Yun Chen ◽  
Wei Yang ◽  
Yin Biao Guo ◽  
Yin Hui Xie ◽  
Long Guo
Keyword(s):  
Surface Roughness ◽  
Crystalline Silicon ◽  
Subsurface Damage ◽  
Process Parameter ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Isotropic Etching ◽  
Atomic Force ◽  
Two Stages ◽  
The Given

Reported in this paper is an investigation of the process parameter effects on surface roughness and subsurface damage (SSD) in CMP of single crystalline Silicon. For the given experiments, the appropriate method to examine the SSD can be obtained. The surface roughness and figure accuracy were measured with an atomic force microscope (AFM) and Taylor-Hobson profilometer. The experiments results indicate proper process parameter for the best surface roughness, which can be divided into two stages. It should use longer time in the finish polishing stage, while shorter time and reduce the ratio of polishing pads and head in the ultra-finish polishing stage. Generally speaking, the isotropic etching of single crystalline Silicon, anisotropic etching of single crystalline Silicon and hand burnishing are mostly used to find the SSD and it is found that the last method is the best one to see the SSD by SEM.

Superior Robust Ultrathin Single-Crystalline Silicon Carbide Membrane as a Versatile Platform for Biological Applications

2017 ◽  
Vol 9 (48) ◽  
pp. 41641-41647 ◽  
Author(s):  
Tuan-Khoa Nguyen ◽  
Hoang-Phuong Phan ◽  
Harshad Kamble ◽  
Raja Vadivelu ◽  
Toan Dinh ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Crystalline Silicon ◽  
Biological Applications ◽  
Single Crystalline Silicon ◽  
Single Crystalline
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