Research on Process Parameter Effects on Surface Roughness and Subsurface Damage in CMP of Single Crystalline Silicon

2012 ◽  
Vol 472-475 ◽  
pp. 887-892
Author(s):  
Mei Yun Chen ◽  
Wei Yang ◽  
Yin Biao Guo ◽  
Yin Hui Xie ◽  
Long Guo
Keyword(s):  
Surface Roughness ◽  
Crystalline Silicon ◽  
Subsurface Damage ◽  
Process Parameter ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Isotropic Etching ◽  
Atomic Force ◽  
Two Stages ◽  
The Given

Reported in this paper is an investigation of the process parameter effects on surface roughness and subsurface damage (SSD) in CMP of single crystalline Silicon. For the given experiments, the appropriate method to examine the SSD can be obtained. The surface roughness and figure accuracy were measured with an atomic force microscope (AFM) and Taylor-Hobson profilometer. The experiments results indicate proper process parameter for the best surface roughness, which can be divided into two stages. It should use longer time in the finish polishing stage, while shorter time and reduce the ratio of polishing pads and head in the ultra-finish polishing stage. Generally speaking, the isotropic etching of single crystalline Silicon, anisotropic etching of single crystalline Silicon and hand burnishing are mostly used to find the SSD and it is found that the last method is the best one to see the SSD by SEM.

Nanoindentation of Silicon

2008 ◽  
Vol 604-605 ◽  
pp. 29-36 ◽  
Author(s):  
Péter M. Nagy ◽  
P. Horváth ◽  
Gábor Pető ◽  
Erika Kálmán
Keyword(s):  
Atomic Force Microscopy ◽  
Phase Transformation ◽  
Crystalline Silicon ◽  
Defect Density ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cube Corner ◽  
Loading And Unloading

The nanoindentation behaviours of single crystalline silicon samples has gained wide attention in recent years, because of the anomaly effects in the loading curve, caused by the pressure induced phase transformation of silicon. To further enlighten the phenomenon bulk, ion-implanted, single crystalline Si samples have been studied by nanoindentation and by atomic force microscopy. The implantation of Si wafers was carried out by P+ ions at 40 KeV accelerating voltage and 80 ions/cm2 dose, influencing the defect density and structure of the Si material in shallow depth at the surface. Our experiments provide Young’s modulus and hardness data measured with Berkovich-, spherical- and cube corner indenters, statistics of the pop-in and pop-out effects in the loading- and unloading process, and interesting results about the piling-up behaviour of the Si material.

A Low Temperature Direct Bonding Method Using an Electron-Beam Evaporated Silicon-Oxide Interlayer

1996 ◽  
Vol 444 ◽  
Author(s):  
H. W. Park ◽  
B. K. Ju ◽  
Y. H. Lee ◽  
J. H. Park ◽  
N. Y. Lee ◽  
...  
Keyword(s):  
Electron Beam ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Atomic Force ◽  
Thermal Oxide ◽  
Ir Transmission ◽  
Bonding Method ◽  
External Forces

AbstractIn this work, we proposed a direct bonding method using interlayers for single crystalline silicon wafers and glass wafers. Various materials were used for interlayers of thermal oxide, sputtered nitride, electron-beam(E-beam) evaporated silicon oxide and molybdenum. After hydrophilization, samples were spin dried and mated together without external forces. Three types of solutions were used for hydrophilizing the samples. Changes of average surface roughness after hydrophilization of the single crystalline silicon wafer, thermal oxide and E-beam silicon-oxide were inspected using atomic force microscope(AFM). Bonding interfaces of the bonded pairs were observed by scanning electron microscope(SEM). Voids and non-contact areas of the bonding pairs were also inspected using infrared(IR) transmission microscope. Surface energy, tensile strength measurements and breaking tests were also done.

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline

Dynamic Crack Propagation in Single-Crystalline Silicon

1998 ◽  
Vol 539 ◽  
Author(s):  
T. Cramer ◽  
A. Wanner ◽  
P. Gumbsch
Keyword(s):  
Crack Propagation ◽  
Crystalline Silicon ◽  
Potential Drop ◽  
Tensile Tests ◽  
Terminal Velocity ◽  
Dynamic Crack Propagation ◽  
Dynamic Crack ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Crack Propagation Velocity

AbstractTensile tests on notched plates of single-crystalline silicon were carried out at high overloads. Cracks were forced to propagate on {110} planes in a <110> direction. The dynamics of the fracture process was measured using the potential drop technique and correlated with the fracture surface morphology. Crack propagation velocity did not exceed a terminal velocity of v = 3800 m/s, which corresponds to 83%7 of the Rayleigh wave velocity vR. Specimens fractured at low stresses exhibited crystallographic cleavage whereas a transition from mirror-like smooth regions to rougher hackle zones was observed in case of the specimens fractured at high stresses. Inspection of the mirror zone at high magnification revealed a deviation of the {110} plane onto {111} crystallographic facets.

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