Mechanisms of material removal and subsurface damage in fixed-abrasive diamond wire slicing of single-crystalline silicon

2017 ◽  
Vol 50 ◽  
pp. 32-43 ◽  
Author(s):  
Takaaki Suzuki ◽  
Yuki Nishino ◽  
Jiwang Yan
Keyword(s):  
Material Removal ◽  
Crystalline Silicon ◽  
Subsurface Damage ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Diamond Wire ◽  
Fixed Abrasive

scholarly journals Performance Evaluation and Comparison between Direct and Chemical-Assisted Picosecond Laser Micro-Trepanning of Single Crystalline Silicon

Materials ◽  
2018 ◽  
Vol 12 (1) ◽  
pp. 41 ◽  
Author(s):  
Hao Zhu ◽  
Zhaoyang Zhang ◽  
Kun Xu ◽  
Jinlei Xu ◽  
Shuaijie Zhu ◽  
...  
Keyword(s):  
Material Removal ◽  
Crystalline Silicon ◽  
Removal Rate ◽  
Picosecond Laser ◽  
Orthogonal Experimental Design ◽  
Single Crystalline Silicon ◽  
Machining Performance ◽  
Single Crystalline ◽  
Direct Laser ◽  
Micro Holes

The fabrication of micro-holes in silicon substrates that have a proper taper, higher depth-to-diameter ratio, and better surface quality has been attracting intense interest for a long time due to its importance in the semiconductor and MEMS (Micro-Electro-Mechanical System) industry. In this paper, an experimental investigation of the machining performance of the direct and chemical-assisted picosecond laser trepanning of single crystalline silicon is conducted, with a view to assess the two machining methods. The relevant parameters affecting the trepanning process are considered, employing the orthogonal experimental design scheme. It is found that the direct laser trepanning results are associated with evident thermal defects, while the chemical-assisted method is capable of machining micro-holes with negligible thermal damage. Range analysis is then carried out, and the effects of the processing parameters on the hole characteristics are amply discussed to obtain the recommended parameters. Finally, the material removal mechanisms that are involved in the two machining methods are adequately analyzed. For the chemical-assisted trepanning case, the enhanced material removal rate may be attributed to the serious mechanical effects caused by the liquid-confined plasma and cavitation bubbles, and the chemical etching effect provided by NaOH solution.

Research on Process Parameter Effects on Surface Roughness and Subsurface Damage in CMP of Single Crystalline Silicon

2012 ◽  
Vol 472-475 ◽  
pp. 887-892
Author(s):  
Mei Yun Chen ◽  
Wei Yang ◽  
Yin Biao Guo ◽  
Yin Hui Xie ◽  
Long Guo
Keyword(s):  
Surface Roughness ◽  
Crystalline Silicon ◽  
Subsurface Damage ◽  
Process Parameter ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Isotropic Etching ◽  
Atomic Force ◽  
Two Stages ◽  
The Given

Reported in this paper is an investigation of the process parameter effects on surface roughness and subsurface damage (SSD) in CMP of single crystalline Silicon. For the given experiments, the appropriate method to examine the SSD can be obtained. The surface roughness and figure accuracy were measured with an atomic force microscope (AFM) and Taylor-Hobson profilometer. The experiments results indicate proper process parameter for the best surface roughness, which can be divided into two stages. It should use longer time in the finish polishing stage, while shorter time and reduce the ratio of polishing pads and head in the ultra-finish polishing stage. Generally speaking, the isotropic etching of single crystalline Silicon, anisotropic etching of single crystalline Silicon and hand burnishing are mostly used to find the SSD and it is found that the last method is the best one to see the SSD by SEM.

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline
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