Effect of an Organic Buffer Layer on the Stability of Zinc Oxide Thin-Film Transistors

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2014.8425 ◽

2014 ◽

Vol 14 (7) ◽

pp. 5070-5074

Author(s):

H. W. Lee ◽

G. W. Hyung ◽

J. R. Koo ◽

E. S. Cho ◽

S. J. Kwon ◽

...

Keyword(s):

Thin Film ◽

Buffer Layer ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Zinc Oxide Thin Film ◽

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The effects of a HfO2 buffer layer on Al2O3-passivated indium-gallium-zinc-oxide thin film transistors

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.201105340 ◽

2011 ◽

Vol 5 (10-11) ◽

pp. 403-405 ◽

Author(s):

Youngbin Ko ◽

Seokhwan Bang ◽

Seungjun Lee ◽

Soyeon Park ◽

Joohyun Park ◽

...

Keyword(s):

Thin Film ◽

Buffer Layer ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

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Influence of ambient humidity on the stability of negative bias illumination for amorphous indium gallium zinc oxide thin film transistors

Chinese Journal of Liquid Crystals and Displays ◽

10.37188/cjlcd.2020-0305 ◽

2021 ◽

Vol 36 (5) ◽

pp. 649-655

Author(s):

Guo-feng FENG ◽

◽

Wen ZHANG ◽

Cheng-yuan DONG

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Negative Bias ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Ambient Humidity ◽

Indium Gallium ◽

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Tailoring Threshold Voltage in Indium-Zinc-Oxide Thin-Film Transistors by Inserting a 2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole Buffer Layer

physica status solidi (a) ◽

10.1002/pssa.201700869 ◽

2018 ◽

Vol 215 (16) ◽

pp. 1700869 ◽

Author(s):

Fei Shan ◽

Sung-Jin Kim

Keyword(s):

Thin Film ◽

Buffer Layer ◽

Threshold Voltage ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Zinc Oxide Thin Film ◽

Indium Zinc Oxide

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Examination of the ambient effects on the stability of amorphous indium-gallium-zinc oxide thin film transistors using a laser-glass-sealing technology

Applied Physics Letters ◽

10.1063/1.4896948 ◽

2014 ◽

Vol 105 (13) ◽

pp. 133503 ◽

Author(s):

Kazuo Yamada ◽

Kenji Nomura ◽

Katsumi Abe ◽

Satoshi Takeda ◽

Hideo Hosono

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Laser Glass ◽

Indium Gallium ◽

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Improving source/drain contact resistance of amorphous indium–gallium–zinc-oxide thin-film transistors using an n+-ZnO buffer layer

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.06gg05 ◽

2016 ◽

Vol 55 (6S1) ◽

pp. 06GG05 ◽

Author(s):

Chien-Hsiung Hung ◽

Shui-Jinn Wang ◽

Chieh Lin ◽

Chien-Hung Wu ◽

Yen-Han Chen ◽

...

Keyword(s):

Thin Film ◽

Contact Resistance ◽

Buffer Layer ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium ◽

Zno Buffer Layer

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Effect of Oxygen Binding Energy on the Stability of Indium-Gallium-Zinc-Oxide Thin-Film Transistors

ETRI Journal ◽

10.4218/etrij.12.0212.0232 ◽

2012 ◽

Vol 34 (6) ◽

pp. 966-969 ◽

Author(s):

Woo-Seok Cheong

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Oxygen Binding ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium ◽

The Stability ◽

Effect Of Oxygen

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Effect of Al2O3 passivation layer on the stability of aluminum-indium-zinc oxide thin film transistors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4994803 ◽

2017 ◽

Vol 35 (4) ◽

pp. 04E103 ◽

Author(s):

Ji-In Park ◽

Yooseong Lim ◽

Minhyung Jang ◽

Namgyung Hwang ◽

Moonsuk Yi

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Passivation Layer ◽

Oxide Thin Film ◽

Zinc Oxide Thin Film ◽

Indium Zinc Oxide ◽

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Influence of channel layer thickness on the stability of amorphous indium zinc oxide thin film transistors

Materials Letters ◽

10.1016/j.matlet.2015.12.029 ◽

2016 ◽

Vol 166 ◽

pp. 46-50 ◽

Author(s):

Zhao Yang ◽

Jianwen Yang ◽

Ting Meng ◽

Mingyue Qu ◽

Qun Zhang

Keyword(s):

Thin Film ◽

Layer Thickness ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Zinc Oxide Thin Film ◽

Channel Layer ◽

Indium Zinc Oxide ◽

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Improvement on the Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Amorphous Oxide Multilayer Source/Drain Electrodes

Transactions on Electrical and Electronic Materials ◽

10.4313/teem.2016.17.3.143 ◽

2016 ◽

Vol 17 (3) ◽

pp. 143-145 ◽

Author(s):

Sang Yeol Lee

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Amorphous Oxide ◽

Indium Gallium ◽

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Influence of gate dielectric/channel interface engineering on the stability of amorphous indium gallium zinc oxide thin-film transistors

physica status solidi (a) ◽

10.1002/pssa.201431062 ◽

2014 ◽

Vol 211 (9) ◽

pp. 2126-2133 ◽

Author(s):

Sung Haeng Cho ◽

Min Ki Ryu ◽

Hee-Ok Kim ◽

Oh-Sang Kwon ◽

Eun-Sook Park ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Gate Dielectric ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Interface Engineering ◽

Zinc Oxide Thin Film ◽

Indium Gallium ◽

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