Effect of Al2O3 passivation layer on the stability of aluminum-indium-zinc oxide thin film transistors
2017 ◽
Vol 35
(4)
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pp. 04E103
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2013 ◽
Vol 52
(10S)
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pp. 10MA02
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2016 ◽
Vol 16
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pp. 12871-12874
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2015 ◽
Vol 32
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pp. 088506
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2021 ◽
Vol 36
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pp. 649-655
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2019 ◽
Vol 30
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pp. 12929-12936
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2016 ◽
Vol 16
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pp. 642-646
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2010 ◽
Vol 31
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pp. 440-442
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2013 ◽
Vol 62
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pp. 527-530
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