Impedance Characterization of the Degradation of Insulating Layer Patterned on Interdigitated Microelectrode

2015 ◽  
Vol 15 (10) ◽  
pp. 7573-7577 ◽  
Author(s):  
Gihyun Lee ◽  
Sohee Kim ◽  
Sungbo Cho
Keyword(s):  
Equivalent Circuit ◽  
Transmission Lines ◽  
Life Time ◽  
Electrical Impedance Spectroscopy ◽  
Circuit Modeling ◽  
Signal Loss ◽  
Measurement Sensitivity ◽  
Insulating Layer ◽  
Equivalent Circuit Modeling ◽  
Interdigitated Microelectrode

Life-time and functionality of planar microelectrode-based devices are determined by not only the corrosion-resistance of the electrode, but also the durability of the insulation layer coated on the transmission lines. Degradation of the insulating layer exposed to a humid environment or solution may cause leakage current or signal loss, and a decrease in measurement sensitivity. In this study, degradation of SU-8, an epoxy-based negative photoresist and insulating material, patterned on Au interdigitated microelectrode (IDE) for long-term (>30 days) immersion in an electrolyte at 37 °C was investigated by electrical impedance spectroscopy and theoretical equivalent circuit modeling. From the experiment and simulation results, it was found that the degradation level of the insulating layer of the IDE electrode can be characterized by monitoring the resistance of the insulating layer among the circuit parameters of the designed equivalent circuit modeling.

scholarly journals Equivalent Circuit Modeling of a Dual-Gate Graphene FET

Electronics ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 63
Author(s):  
Saima Hasan ◽  
Abbas Z. Kouzani ◽  
M A Parvez Mahmud
Keyword(s):  
Equivalent Circuit ◽  
Gate Voltage ◽  
Voltage Dependence ◽  
Drain Current ◽  
Bilayer Graphene ◽  
Circuit Modeling ◽  
Equivalent Circuit Modeling ◽  
Dual Gate ◽  
Source Voltage ◽  
Transit Frequency

This paper presents a simple and comprehensive model of a dual-gate graphene field effect transistor (FET). The quantum capacitance and surface potential dependence on the top-gate-to-source voltage were studied for monolayer and bilayer graphene channel by using equivalent circuit modeling. Additionally, the closed-form analytical equations for the drain current and drain-to-source voltage dependence on the drain current were investigated. The distribution of drain current with voltages in three regions (triode, unipolar saturation, and ambipolar) was plotted. The modeling results exhibited better output characteristics, transfer function, and transconductance behavior for GFET compared to FETs. The transconductance estimation as a function of gate voltage for different drain-to-source voltages depicted a proportional relationship; however, with the increase of gate voltage this value tended to decline. In the case of transit frequency response, a decrease in channel length resulted in an increase in transit frequency. The threshold voltage dependence on back-gate-source voltage for different dielectrics demonstrated an inverse relationship between the two. The analytical expressions and their implementation through graphical representation for a bilayer graphene channel will be extended to a multilayer channel in the future to improve the device performance.

A New GaN HEMT Equivalent Circuit Modeling Technique Based on X-Parameters

2016 ◽  
Vol 64 (9) ◽  
pp. 2758-2777 ◽  
Author(s):  
Riadh Essaadali ◽  
Anwar Jarndal ◽  
Ammar B. Kouki ◽  
Fadhel M. Ghannouchi
Keyword(s):  
Equivalent Circuit ◽  
Modeling Technique ◽  
Circuit Modeling ◽  
Gan Hemt ◽  
Equivalent Circuit Modeling
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