Selective Epitaxial Growth of GaAs on a Si (001) Surface Formed by an In Situ Bake in a Metal-Organic Chemical Vapor Deposition Reactor

2017 ◽  
Vol 17 (5) ◽  
pp. 3242-3246
Author(s):  
Young-Dae Cho ◽  
In-Geun Lee ◽  
Mi-Jin Jung ◽  
Hyunsu Shin ◽  
Dong-Hwan Jun ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Chemical Vapor Deposition Reactor ◽  
Selective Epitaxial Growth ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Selective epitaxial growth of Ge 1−x Sn x on Si by using metal-organic chemical vapor deposition

2017 ◽  
Vol 468 ◽  
pp. 614-619 ◽  
Author(s):  
Tomoya Washizu ◽  
Shinichi Ike ◽  
Yuki Inuzuka ◽  
Wakana Takeuchi ◽  
Osamu Nakatsuka ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Selective Epitaxial Growth ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

In situ single-liquid-source metal-organic chemical vapor deposition of (La0.8Ca0.2)MnO3 giant magnetoresistive films

1995 ◽  
Vol 10 (9) ◽  
pp. 2166-2169 ◽  
Author(s):  
Y.Q. Li ◽  
J. Zhang ◽  
S. Pombrik ◽  
S. DiMascio ◽  
W. Stevens ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Organic Solution ◽  
Liquid Source ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

A large magnetoresistance change (ΔR/RH) of −550% has been observed at 270 K in (La0.8Ca0.2)MnO3 thin films. The films were prepared in situ on LaAlO3 substrates by single-liquid-source metal-organic chemical vapor deposition. M(thd)n (M = La, Ca, and Mn, and n = 2, 3) were dissolved together in an organic solution and used as precursors for the deposition of (La0.8Ca0.2)MnO3 thin films. Deposition was conducted at an oxygen partial pressure of 1.2 Torr and a substrate temperature ranging from 600 °C to 700 °C. The mechanism for the large magnetoresistance change in this manganese oxide is briefly discussed.

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