Gate Voltage Dependence of Low Frequency Noise in Tunneling Field Effect Transistors

2019 ◽  
Vol 19 (10) ◽  
pp. 6083-6086
Author(s):  
So-Yeong Kim ◽  
Hyeong-Sub Song ◽  
Sung-Kyu Kwon ◽  
Dong-Hwan Lim ◽  
Chang-Hwan Choi ◽  
...  
2017 ◽  
Vol 137 ◽  
pp. 95-101 ◽  
Author(s):  
S.T. Bu ◽  
D.M. Huang ◽  
G.F. Jiao ◽  
H.Y. Yu ◽  
Ming-Fu Li

2011 ◽  
Vol 20 (01) ◽  
pp. 105-113
Author(s):  
S. RUMYANTSEV ◽  
W. STILLMAN ◽  
M. SHUR ◽  
T. HEEG ◽  
D.G. SCHLOM ◽  
...  

Insulated gate n-channel enhancement mode InGaAs field effect transistors with the GdScO 3 high-k dielectric have been fabricated and studied. The low frequency noise was high indicating a high interface density of traps. Trap density and its dependence on the gate voltage have been extracted from the noise and conductance measurements.


2018 ◽  
Author(s):  
Hyeong-Sub Song ◽  
Dong-Hwan Lim ◽  
Sung-Kyu Kwon ◽  
So-Yeong Kim ◽  
Ga-Won Lee ◽  
...  

2010 ◽  
Vol 97 (24) ◽  
pp. 243503 ◽  
Author(s):  
J. Wan ◽  
C. Le Royer ◽  
A. Zaslavsky ◽  
S. Cristoloveanu

2008 ◽  
Vol 92 (22) ◽  
pp. 223114 ◽  
Author(s):  
Guangyu Xu ◽  
Fei Liu ◽  
Song Han ◽  
Koungmin Ryu ◽  
Alexander Badmaev ◽  
...  

2008 ◽  
Vol 104 (9) ◽  
pp. 094505 ◽  
Author(s):  
S. L. Rumyantsev ◽  
M. S. Shur ◽  
M. E. Levinshtein ◽  
P. A. Ivanov ◽  
J. W. Palmour ◽  
...  

2019 ◽  
Vol 114 (11) ◽  
pp. 113502 ◽  
Author(s):  
Jiseok Kwon ◽  
Joon Hyeong Park ◽  
Collin J. Delker ◽  
Charles T. Harris ◽  
Brian Swartzentruber ◽  
...  

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