LOW FREQUENCY NOISE AND INTERFACE DENSITY OF TRAPS IN InGaAs MOSFETs WITH GdScO3 HIGH-K DIELECTRIC
2011 ◽
Vol 20
(01)
◽
pp. 105-113
Keyword(s):
High K
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Insulated gate n-channel enhancement mode InGaAs field effect transistors with the GdScO 3 high-k dielectric have been fabricated and studied. The low frequency noise was high indicating a high interface density of traps. Trap density and its dependence on the gate voltage have been extracted from the noise and conductance measurements.
2019 ◽
Vol 19
(10)
◽
pp. 6083-6086
Keyword(s):
2000 ◽
Vol 40
(11)
◽
pp. 1897-1903
◽
Keyword(s):
Keyword(s):
Keyword(s):
2012 ◽
Vol 51
(6S)
◽
pp. 06FE18
◽
Keyword(s):
2015 ◽