LOW FREQUENCY NOISE AND INTERFACE DENSITY OF TRAPS IN InGaAs MOSFETs WITH GdScO3 HIGH-K DIELECTRIC

2011 ◽  
Vol 20 (01) ◽  
pp. 105-113
Author(s):  
S. RUMYANTSEV ◽  
W. STILLMAN ◽  
M. SHUR ◽  
T. HEEG ◽  
D.G. SCHLOM ◽  
...  

Insulated gate n-channel enhancement mode InGaAs field effect transistors with the GdScO 3 high-k dielectric have been fabricated and studied. The low frequency noise was high indicating a high interface density of traps. Trap density and its dependence on the gate voltage have been extracted from the noise and conductance measurements.

2019 ◽  
Vol 19 (10) ◽  
pp. 6083-6086
Author(s):  
So-Yeong Kim ◽  
Hyeong-Sub Song ◽  
Sung-Kyu Kwon ◽  
Dong-Hwan Lim ◽  
Chang-Hwan Choi ◽  
...  

2019 ◽  
Vol 115 (18) ◽  
pp. 183501 ◽  
Author(s):  
P. Sai ◽  
J. Jorudas ◽  
M. Dub ◽  
M. Sakowicz ◽  
V. Jakštas ◽  
...  

2008 ◽  
Vol 92 (22) ◽  
pp. 223114 ◽  
Author(s):  
Guangyu Xu ◽  
Fei Liu ◽  
Song Han ◽  
Koungmin Ryu ◽  
Alexander Badmaev ◽  
...  

2008 ◽  
Vol 104 (9) ◽  
pp. 094505 ◽  
Author(s):  
S. L. Rumyantsev ◽  
M. S. Shur ◽  
M. E. Levinshtein ◽  
P. A. Ivanov ◽  
J. W. Palmour ◽  
...  

2019 ◽  
Vol 114 (11) ◽  
pp. 113502 ◽  
Author(s):  
Jiseok Kwon ◽  
Joon Hyeong Park ◽  
Collin J. Delker ◽  
Charles T. Harris ◽  
Brian Swartzentruber ◽  
...  

2012 ◽  
Vol 51 (6S) ◽  
pp. 06FE18 ◽  
Author(s):  
Toru Muramatsu ◽  
Kensuke Miura ◽  
Yuta Shiratori ◽  
Zenji Yatabe ◽  
Seiya Kasai

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