gate voltage dependence Latest Research Papers

Gate voltage dependence of noise distribution in radio-frequency reflectometry in gallium arsenide quantum dots

Applied Physics Express ◽

10.35848/1882-0786/abe41f ◽

2021 ◽

Vol 14 (3) ◽

pp. 035002

Author(s):

Motoya Shinozaki ◽

Yui Muto ◽

Takahito Kitada ◽

Takashi Nakajima ◽

Matthieu R. Delbecq ◽

...

Keyword(s):

Quantum Dots ◽

Gallium Arsenide ◽

Radio Frequency ◽

Gate Voltage ◽

Voltage Dependence ◽

Noise Distribution ◽

Gate Voltage Dependence

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Gate Voltage-Dependence of Junction Capacitance in MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3101999 ◽

2021 ◽

pp. 1-4

Author(s):

Jinwook Kuk ◽

Seonghearn Lee

Keyword(s):

Gate Voltage ◽

Voltage Dependence ◽

Junction Capacitance ◽

Gate Voltage Dependence

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Gate Voltage Dependence of Low Frequency Noise in Tunneling Field Effect Transistors

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2019.16989 ◽

2019 ◽

Vol 19 (10) ◽

pp. 6083-6086

Author(s):

So-Yeong Kim ◽

Hyeong-Sub Song ◽

Sung-Kyu Kwon ◽

Dong-Hwan Lim ◽

Chang-Hwan Choi ◽

...

Keyword(s):

Gate Voltage ◽

Field Effect ◽

Voltage Dependence ◽

Field Effect Transistors ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Tunneling Field Effect Transistors ◽

Gate Voltage Dependence

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Unconventional gate voltage dependence of the charge conductance caused by spin-splitting Fermi surface by Rashba-type spin-orbit coupling

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2019.113615 ◽

2019 ◽

Vol 114 ◽

pp. 113615

Author(s):

Daisuke Oshima ◽

Katsuhisa Taguchi ◽

Yukio Tanaka

Keyword(s):

Fermi Surface ◽

Gate Voltage ◽

Voltage Dependence ◽

Orbit Coupling ◽

Spin Splitting ◽

Spin Orbit Coupling ◽

Spin Orbit ◽

Gate Voltage Dependence

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Gate voltage dependence of channel length modulation for 14 nm FinFETs

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2016.7521673 ◽

2016 ◽

Cited By ~ 1

Author(s):

Yuki Nariai ◽

Akira Hiroki

Keyword(s):

Gate Voltage ◽

Voltage Dependence ◽

Channel Length ◽

Gate Voltage Dependence

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Reliability of Highly Stable Amorphous-Silicon Thin-Film Transistors Under Low Gate-Field Stress—Part II: Optimization of Fabrication Conditions and Gate Voltage Dependence

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2016.2524626 ◽

2016 ◽

Vol 16 (2) ◽

pp. 255-262

Author(s):

Ting Liu ◽

Levent E. Aygun ◽

Sigurd Wagner ◽

James C. Sturm

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Gate Voltage ◽

Thin Film Transistors ◽

Voltage Dependence ◽

Silicon Thin Film ◽

Field Stress ◽

Gate Voltage Dependence

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Variability of low frequency noise in moderately-sized MOSFETs — A model for the area- and gate voltage-dependence

2015 International Conference on Noise and Fluctuations (ICNF) ◽

10.1109/icnf.2015.7288578 ◽

2015 ◽

Cited By ~ 4

Author(s):

Nikolaos Mavredakis ◽

Predrag Habas ◽

Alexandre Acovic ◽

Rene Meyer ◽

Matthias Bucher

Keyword(s):

Gate Voltage ◽

Voltage Dependence ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Gate Voltage Dependence

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Gate voltage dependence of channel length modulation for Ge p-channel MOSFETs

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2014.6867054 ◽

2014 ◽

Author(s):

Yuta Goto ◽

Akira Hiroki ◽

Akihiro Matsuda ◽

Masaaki Nakamura ◽

JongChul Yoon

Keyword(s):

Gate Voltage ◽

Voltage Dependence ◽

Channel Length ◽

Gate Voltage Dependence

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Gate voltage dependence of channel length modulation for InGaAs n-channel MOSFETs

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2014.6867056 ◽

2014 ◽

Author(s):

Akihiro Matsuda ◽

Akira Hiroki ◽

Yuta Goto ◽

Masaaki Nakamura ◽

JongChul Yoon

Keyword(s):

Gate Voltage ◽

Voltage Dependence ◽

Channel Length ◽

Gate Voltage Dependence

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Gate voltage dependence of 1/f noise in carbon nanotubes with the different metal contacts

2013 22nd International Conference on Noise and Fluctuations (ICNF) ◽

10.1109/icnf.2013.6578970 ◽

2013 ◽

Cited By ~ 4

Author(s):

Toshio Kawahara ◽

Satarou Yamaguchi ◽

Yasuhide Ohno ◽

Kenzo Maehashi ◽

Kazuhiko Matsumoto ◽

...

Keyword(s):

Carbon Nanotubes ◽

Gate Voltage ◽

Voltage Dependence ◽

Metal Contacts ◽

Gate Voltage Dependence

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gate voltage dependence
Recently Published Documents

TOTAL DOCUMENTS

H-INDEX

Gate voltage dependence of noise distribution in radio-frequency reflectometry in gallium arsenide quantum dots

Gate Voltage-Dependence of Junction Capacitance in MOSFETs

Gate Voltage Dependence of Low Frequency Noise in Tunneling Field Effect Transistors

Unconventional gate voltage dependence of the charge conductance caused by spin-splitting Fermi surface by Rashba-type spin-orbit coupling

Gate voltage dependence of channel length modulation for 14 nm FinFETs

Reliability of Highly Stable Amorphous-Silicon Thin-Film Transistors Under Low Gate-Field Stress—Part II: Optimization of Fabrication Conditions and Gate Voltage Dependence

Variability of low frequency noise in moderately-sized MOSFETs — A model for the area- and gate voltage-dependence

Gate voltage dependence of channel length modulation for Ge p-channel MOSFETs

Gate voltage dependence of channel length modulation for InGaAs n-channel MOSFETs

Gate voltage dependence of 1/f noise in carbon nanotubes with the different metal contacts

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gate voltage dependenceRecently Published Documents

TOTAL DOCUMENTS

H-INDEX

Gate voltage dependence of noise distribution in radio-frequency reflectometry in gallium arsenide quantum dots

Gate Voltage-Dependence of Junction Capacitance in MOSFETs

Gate Voltage Dependence of Low Frequency Noise in Tunneling Field Effect Transistors

Unconventional gate voltage dependence of the charge conductance caused by spin-splitting Fermi surface by Rashba-type spin-orbit coupling

Gate voltage dependence of channel length modulation for 14 nm FinFETs

Reliability of Highly Stable Amorphous-Silicon Thin-Film Transistors Under Low Gate-Field Stress—Part II: Optimization of Fabrication Conditions and Gate Voltage Dependence

Variability of low frequency noise in moderately-sized MOSFETs — A model for the area- and gate voltage-dependence

Gate voltage dependence of channel length modulation for Ge p-channel MOSFETs

Gate voltage dependence of channel length modulation for InGaAs n-channel MOSFETs

Gate voltage dependence of 1/f noise in carbon nanotubes with the different metal contacts

gate voltage dependence
Recently Published Documents