Structural and optical properties of ultrananocrystalline diamond / InGaAs/GaAs quantum dot structures

2009 ◽  
Vol 518 (5) ◽  
pp. 1489-1492 ◽  
Author(s):  
C. Popov ◽  
A. Gushterov ◽  
L. Lingys ◽  
C. Sippel ◽  
J.P. Reithmaier
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Structural And Optical Properties ◽  
Ultrananocrystalline Diamond ◽  
Gaas Quantum Dot

Ring-shaped GaAs quantum dot laser grown by droplet epitaxy: Effects of post-growth annealing on structural and optical properties

2007 ◽  
Vol 301-302 ◽  
pp. 740-743 ◽  
Author(s):  
T. Mano ◽  
T. Kuroda ◽  
K. Mitsuishi ◽  
M. Yamagiwa ◽  
X.-J. Guo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Droplet Epitaxy ◽  
Structural And Optical Properties ◽  
Quantum Dot Laser ◽  
Gaas Quantum Dot

Investigation of the effect of varying growth pauses on the structural and optical properties of InAs/GaAs quantum dot heterostructures

2009 ◽  
Vol 46 (4) ◽  
pp. 611-617 ◽  
Author(s):  
S. Sengupta ◽  
N. Halder ◽  
S. Chakrabarti ◽  
Miriam Herrera ◽  
Marta Bonds ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Structural And Optical Properties ◽  
Gaas Quantum Dot

Optical Properties from a Single GaAs Quantum Dot Structure

2021 ◽  
Vol 21 (9) ◽  
pp. 4908-4910
Author(s):  
Heedae Kim
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Power Factor ◽  
Energy Difference ◽  
Large Energy ◽  
Gaas Quantum Dot ◽  
Perpendicular Polarization

We observed exciton and biexciton states in a single GaAs quantum dot at 4 K using micro pho-toluminescence system and investigated power dependent photoluminescence measurements to identify both exciton and biexciton states. The biexciton and exciton states showed quadratic (a~2.2) and linear (a~0.95) increasing power factor, respectively. The large energy difference (~0.2 meV) from exciton states for the perpendicular polarization was observed.

Optical properties of excitons in strained Gax In1-xAs/GaAs quantum dot: ef fect of geometrical conf inement on exciton g-factor

2013 ◽  
Vol 11 (8) ◽  
pp. 082501-82507
Author(s):  
N. R. Senthil Kumar N. R. Senthil Kumar ◽  
A. John Peter A. John Peter ◽  
Chang Woo Lee Chang Woo Lee
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
G Factor ◽  
Gaas Quantum Dot

scholarly journals Near-field photoluminescence spectroscopy of localized states in InGaAsN alloys

2001 ◽  
Vol 692 ◽  
Author(s):  
A. M. Mintairov ◽  
P. A. Blagnov ◽  
T. Kosel ◽  
J. L. Merz ◽  
V. M. Ustinov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Near Field ◽  
Zeeman Splitting ◽  
Localized States ◽  
Emission Lines ◽  
Structural And Optical Properties ◽  
Dramatic Difference ◽  
Nitrogen Excess ◽  
Narrow Emission

AbstractWe used near-field magneto-photoluminescence scanning microscopy to study structural and optical properties of quantum-dot-like compositional fluctuations in GaAsN and InGaAsN alloys. We show that these fluctuations manifest themselves by the appearance of narrow emission lines (halfwidth 0.5−2 meV) at temperatures below 70K. We estimated the size, density, and nitrogen excess of individual compositional fluctuations (clusters), revealing phaseseparation effects in the distribution of nitrogen in GaAsN and InGaAsN. We found a dramatic difference in the Zeeman splitting of cluster lines between GaAsN and InGaAsN, indicating a strong effect of In on the exciton g-factor.

Optical properties of bilayer InAs/GaAs quantum dot structures: Influence of strain and surface morphology

2002 ◽  
Vol 66 (7) ◽  
Author(s):  
P. B. Joyce ◽  
E. C. Le Ru ◽  
T. J. Krzyzewski ◽  
G. R. Bell ◽  
R. Murray ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Surface Morphology ◽  
Gaas Quantum Dot
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