Structures and Properties of Oriented IZO Transparent Conducting Thin Films Deposited on AZO Buffer Layers by Pulsed Laser Deposition

2011 ◽  
Vol 6 (3) ◽  
pp. 375-378 ◽  
Author(s):  
Jin-Hyun Shin ◽  
Dong-Kyun Shin ◽  
Hee Young Lee ◽  
Jai-Yeoul Lee
1991 ◽  
Vol 243 ◽  
Author(s):  
K. Nashimoto ◽  
D. K. Fork ◽  
F. A. Ponce ◽  
T. H. Geballe

AbstractEpitaxial growth of ferroelectric thin films on GaAs (100) by pulsed laser deposition was examined for integrated electro-optic device applications. To promote epitaxy of ferroelectrics and prevent interdiffusion, we have deposited several types of buffer layers. CeO2 reacted strongly with GaAs. Although Y203 9% stabilized-ZrO2 films showed epitaxial growth, YSZ reacted with GaAs at 780°C. MgO grew epitaxially and was stable even at 780°C. HRTEM observation showed a sharp interface between MgO and GaAs. BaTiO3 and SrTiO3 deposited on MgO/GaAs structures showed epitaxial growth. In-plane orientation was BaTiO3 [100 // MgO [100] // GaAs [100]. Epitaxial BaTiO3 films were c-axis oriented tetragonal phase and showed ferroelectric hysteresis.


2006 ◽  
Vol 252 (13) ◽  
pp. 4545-4548
Author(s):  
Hyun Woo Chung ◽  
Eun Sun Lee ◽  
Dong Hua Li ◽  
Byung Du Ahn ◽  
Sang Yeol Lee

2009 ◽  
Vol 381 (1) ◽  
pp. 87-91 ◽  
Author(s):  
Xiaohua Zhang ◽  
Wei Ren ◽  
Peng Shi ◽  
Aifen Tian ◽  
Xiaofeng Chen ◽  
...  

Shinku ◽  
2003 ◽  
Vol 46 (8) ◽  
pp. 632-635 ◽  
Author(s):  
Akio SUZUKI ◽  
Yoshiyuki TANI ◽  
Takanori AOKI ◽  
Tatsuhiko MATSUSHITA ◽  
Masahiro OKUDA

Shinku ◽  
2003 ◽  
Vol 46 (10) ◽  
pp. 752-755 ◽  
Author(s):  
Hideaki AGURA ◽  
Akio SUZUKI ◽  
Takanori AOKI ◽  
Tatsuhiko MATSUSHITA ◽  
Hirokazu OKINAKA ◽  
...  

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