Heteroepitaxial growth of RuO2 thin films on α-Al2O3 substrates with CeO2 buffer layers by pulsed laser deposition

1998 ◽  
Vol 16 (4) ◽  
pp. 2725-2727 ◽  
Author(s):  
C. L. Chen ◽  
Q. X. Jia ◽  
Y. C. Lu ◽  
J. L. Smith ◽  
T. E. Mitchell
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Heteroepitaxial Growth ◽  
Α Al2o3

Vapour–liquid–solid-like growth of high-quality and uniform 3C–SiC heteroepitaxial films on α-Al2O3(0001) substrates

CrystEngComm ◽  
2021 ◽  
Author(s):  
Naoki Sannodo ◽  
Asuka Osumi ◽  
Kenichi Kaminaga ◽  
Shingo Maruyama ◽  
Yuji Matsumoto
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Beam Deflection ◽  
Heteroepitaxial Growth ◽  
High Quality ◽  
Α Al2o3

We employ our pulsed laser deposition system with rapid beam deflection to demonstrate the heteroepitaxial growth of 3C–SiC thin films by a vapour–liquid–solid-like mechanism by alternating deposition of SiC and NiSi2 flux in nanoscale.

Epitaxial Growth of Ferroelectric Thin Films on GaAs with MgO Buffer Layers by Pulsed Laser Deposition

1991 ◽  
Vol 243 ◽  
Author(s):  
K. Nashimoto ◽  
D. K. Fork ◽  
F. A. Ponce ◽  
T. H. Geballe
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Hrtem Observation ◽  
Device Applications ◽  
Ferroelectric Hysteresis

AbstractEpitaxial growth of ferroelectric thin films on GaAs (100) by pulsed laser deposition was examined for integrated electro-optic device applications. To promote epitaxy of ferroelectrics and prevent interdiffusion, we have deposited several types of buffer layers. CeO2 reacted strongly with GaAs. Although Y203 9% stabilized-ZrO2 films showed epitaxial growth, YSZ reacted with GaAs at 780°C. MgO grew epitaxially and was stable even at 780°C. HRTEM observation showed a sharp interface between MgO and GaAs. BaTiO3 and SrTiO3 deposited on MgO/GaAs structures showed epitaxial growth. In-plane orientation was BaTiO3 [100 // MgO [100] // GaAs [100]. Epitaxial BaTiO3 films were c-axis oriented tetragonal phase and showed ferroelectric hysteresis.

Homoepitaxial and Heteroepitaxial Growth of Sr0.61Ba0.39Nb2O6 Thin Films by Pulsed Laser Deposition

1995 ◽  
Vol 401 ◽  
Author(s):  
J. S. Yeo ◽  
K. E. Youden ◽  
T. F. Huang ◽  
L. Hesselink ◽  
J. S. Harris
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Optical Loss ◽  
Laser Deposition ◽  
Heteroepitaxial Growth ◽  
Sharp Transition ◽  
Transition Band ◽  
High Resolution Tem ◽  
Plane View

AbstractEpitaxial SBN:61 films have been grown on SBN:75 and MgO substrates by pulsed laser deposition. The optical loss due to absorption is greatly reduced by increasing the oxygen pressure to 1 mbar during the cooling process. In homoepitaxy, X-ray phi scans on the (221) plane of the SBN:61 films indicate that the in-plane grains are rotated 0° or ±28° with respect to single crystalline SBN:75 substrates. Cross-section and plane view high resolution TEM reveals this crystalline relations and microstructure of SBN thin films. Pr doped SBN:61 thin films show sharp transition band at 495 nm and 607 nm in room temperature photoluminescence measurement.

Effect of buffer layers on the property of Pb(Zr,Ti)O3–Pb(Mn,W,Sb,Nb)O3 thin films grown by pulsed laser deposition

2006 ◽  
Vol 252 (13) ◽  
pp. 4545-4548
Author(s):  
Hyun Woo Chung ◽  
Eun Sun Lee ◽  
Dong Hua Li ◽  
Byung Du Ahn ◽  
Sang Yeol Lee
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Laser Deposition
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