Uncertainty Analysis of In- and Cross-Plane Thermal Conductivities of p-Bi0.5Sb1.5Te3 Thin Films by Changing Heater Widths in the Four-Point-Probe 3-Omega Method

2017 ◽  
Vol 12 (9) ◽  
pp. 986-991 ◽  
Author(s):  
Won-Yong Lee ◽  
Jay-Young Ahn ◽  
Ahmad Umar ◽  
Sang-Kwon Lee
2008 ◽  
Vol 2008.61 (0) ◽  
pp. 291-292
Author(s):  
Makoto TAKIISHI ◽  
Saburo TANAKA ◽  
Hiroshi TSUKAMOTO ◽  
Koji MIYAZAKI

Author(s):  
Saburo Tanaka ◽  
Masayuki Takashiri ◽  
Koji Miyazaki

Nanostructured bismuth telluride based thin films, including nanoparticle and nanocrystalline have been prepared and measured their thermal conductivities. These thin films exhibit an average grain size of from 10 nm to 150 nm. The cross-plane thermal conductivities are measured by 3-omega method at 300 K. The determined nanostructured bismuth telluride thermal conductivities are 0.18 W/(m·K) and nanoparticle bismuth telluride thin film thermal conductivities are from 0.61 W/(m·K) to 0.80 W/(m·K). As compared with bulk alloys at the same atomic composition, both the nanoparticle and nanocrystalline thin films exhibit a reduction in the thermal conductivity. For more detail analysis, the reduction of the thermal conductivity is examined by a simplified phonon gas model on single crystal of bulk bismuth telluride, antimony telluride and bismuth selenide, The analytical model is consistent with the experimental results, and thus we consider that the thermal conductivity is reduced by the strong phonon scattering.


2021 ◽  
Vol 2057 (1) ◽  
pp. 012108
Author(s):  
E S Makarova ◽  
A V Novotelnova

Abstract Using the method of computer simulation, the uncertainty of measurements of the thermal conductivity of silicon, which is often used as substrates, and also thin films based on bismuth, is estimated. The influence of the application of an additional dielectric layer between the thermoelectric film and the resistive heater on the measurement results is shown.


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