Optimization of Laser Recrystallization Process for GeSn Films on Si Substrates Based on Finite Difference Time Domain and Finite Element Method

GeSn alloy on Si substrate has the advantages of high carrier mobility, high radiation recombination efficiency, compatibility with the Si process, and is widely used in the field of semiconductor optoelectronics. However, due to the high lattice mismatch between the GeSn epitaxial layer and the Si substrate, how to prepare a perfect GeSn film on the Si substrate is an issue. The 808 nm continuous wave laser recrystallization technology can significantly improve the quality of the GeSn alloy epitaxial layer by melting and recrystallization, which provide another technical way for solving this problem. Optimized laser recrystallization related process parameters is necessary when laser recrystallization technology is used to prepare high quality GeSn alloy on Si substrate. For this purpose, the absorption, reflection and transmission models of GeSn alloy epitaxial layer/Si substrate system irradiated by 808 nm continuous wave laser are established using finite difference time domain software FDTD Solutions. The thickness-related process parameters of GeSn alloy epitaxial layer and SiO2 capping layer are optimized. In addition, the temperature distribution model of 808 nm continuous wave laser irradiation of GeSn alloy epitaxial layer on Si substrate system is obtained by COMSOL Multiphysics simulation. The process parameters related to laser recrystallization temperature are optimized and listed, which can be used as important technical references for the growth of low defect density GeSn layer on Si substrate assisted by the laser recrystallization technology.