Inception of plasticity in copper single crystal in presence of stacking fault tetrahedra

2012 ◽  
Vol 28 (9-10) ◽  
pp. 1141-1146 ◽  
Author(s):  
I. Salehinia ◽  
D. F. Bahr
Keyword(s):  
Single Crystal ◽  
Stacking Fault ◽  
Copper Single Crystal ◽  
Stacking Fault Tetrahedra

scholarly journals Stacking fault tetrahedron induced plasticity in copper single crystal

2017 ◽  
Vol 680 ◽  
pp. 27-38 ◽  
Author(s):  
Liang Zhang ◽  
Cheng Lu ◽  
Kiet Tieu ◽  
Lihong Su ◽  
Xing Zhao ◽  
...  
Keyword(s):  
Single Crystal ◽  
Stacking Fault ◽  
Copper Single Crystal ◽  
Stacking Fault Tetrahedron

scholarly journals Stacking fault tetrahedra in single-crystal aluminum induced by high-current pulsed electron beam

2008 ◽  
Vol 57 (1) ◽  
pp. 392
Author(s):  
Guan Qing-Feng ◽  
Chen Bo ◽  
Zhang Qing-Yu ◽  
Dong Chuang ◽  
Zou Guang-Tian
Keyword(s):  
Electron Beam ◽  
Single Crystal ◽  
Stacking Fault ◽  
High Current ◽  
Pulsed Electron Beam ◽  
Stacking Fault Tetrahedra

Creation of Dislocations in a Shall Copper Single Crystal

1992 ◽  
Vol 278 ◽  
Author(s):  
Masao Doyama
Keyword(s):  
Single Crystal ◽  
Yield Stress ◽  
Partial Dislocation ◽  
Stacking Fault ◽  
Copper Single Crystal ◽  
Shockley Partial ◽  
Partial Dislocations ◽  
Edge Dislocations

AbstractEdge dislocations were created on a surface of a small copper single crystal. Very sharp yield stress was observed when a partial dislocation was created. Edge dislocations in copper were split into Heidenreich–Shockley partial dislocations connected with the stacking fault.

Stress-induced formation mechanism of stacking fault tetrahedra in nano-cutting of single crystal copper

2015 ◽  
Vol 355 ◽  
pp. 1153-1160 ◽  
Author(s):  
Quanlong Wang ◽  
Qingshun Bai ◽  
Jiaxuan Chen ◽  
Yongbo Guo ◽  
Wenkun Xie
Keyword(s):  
Single Crystal ◽  
Formation Mechanism ◽  
Stacking Fault ◽  
Single Crystal Copper ◽  
Stacking Fault Tetrahedra

Contrast From Point Defects in The Infinitesimal Approximation

1980 ◽  
Vol 38 ◽  
pp. 350-351
Author(s):  
L. J. Sykes ◽  
J. J. Hren
Keyword(s):  
Electron Microscope ◽  
Point Defects ◽  
Broad Class ◽  
Stacking Fault ◽  
Crystalline Solids ◽  
Dislocation Loops ◽  
Analytical Expression ◽  
Stacking Fault Tetrahedra

In electron microscope studies of crystalline solids there is a broad class of very small objects which are imaged primarily by strain contrast. Typical examples include: dislocation loops, precipitates, stacking fault tetrahedra and voids. Such objects are very difficult to identify and measure because of the sensitivity of their image to a host of variables and a similarity in their images. A number of attempts have been made to publish contrast rules to help the microscopist sort out certain subclasses of such defects. For example, Ashby and Brown (1963) described semi-quantitative rules to understand small precipitates. Eyre et al. (1979) published a catalog of images for BCC dislocation loops. Katerbau (1976) described an analytical expression to help understand contrast from small defects. There are other publications as well.

Laser damage mechanism and in-situ observation of stacking fault relaxation in β-Ga2O3 single crystal by EFG method

CrystEngComm ◽  
2021 ◽  
Author(s):  
Bo Fu ◽  
Gaohang He ◽  
Wenxiang Mu ◽  
Yang Li ◽  
Boyuan Feng ◽  
...  
Keyword(s):  
Single Crystal ◽  
Light Field ◽  
Damage Mechanism ◽  
Stacking Fault ◽  
High Light ◽  
Laser Damage ◽  
In Situ Observation ◽  
Structure Destruction

We designed an original and effective method to study the laser damage mechanism of β-Ga2O3 single crystal grown by edge-defined film-fed growth (EFG). The structure destruction under high light field...

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