Erratum to ‘Stacking fault tetrahedron induced plasticity in copper single crystal’ [Mater. Sci. Eng. A 680C (2016) 27–38]

2017 ◽  
Vol 684 ◽  
pp. 737-738
Author(s):  
Liang Zhang ◽  
Cheng Lu ◽  
Kiet Tieu ◽  
Lihong Su ◽  
Xing Zhao ◽  
...  
Keyword(s):  
Single Crystal ◽  
Stacking Fault ◽  
Copper Single Crystal ◽  
Stacking Fault Tetrahedron

scholarly journals Stacking fault tetrahedron induced plasticity in copper single crystal

2017 ◽  
Vol 680 ◽  
pp. 27-38 ◽  
Author(s):  
Liang Zhang ◽  
Cheng Lu ◽  
Kiet Tieu ◽  
Lihong Su ◽  
Xing Zhao ◽  
...  
Keyword(s):  
Single Crystal ◽  
Stacking Fault ◽  
Copper Single Crystal ◽  
Stacking Fault Tetrahedron

scholarly journals Effect of Cutting Crystal Directions on Micro-Defect Evolution of Single Crystal γ-TiAl Alloy with Molecular Dynamics Simulation

Metals ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 1278
Author(s):  
Jianhua Li ◽  
Ruicheng Feng ◽  
Haiyang Qiao ◽  
Haiyan Li ◽  
Maomao Wang ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Single Crystal ◽  
Dislocation Loop ◽  
Tial Alloy ◽  
Amorphous Layer ◽  
Stacking Fault ◽  
Dynamics Simulation ◽  
Machined Surface ◽  
Stacking Fault Tetrahedron

In this work, the distribution and evolution of micro-defect in single crystal γ-TiAl alloy during nanometer cutting is studied by means of molecular dynamics simulation. Nanometer cutting is performed along two typical crystal directions: [ 1 ¯ 00 ] and [ 1 ¯ 01 ] . A machined surface, system potential energy, amorphous layer, lattice deformation and the formation mechanism of chip are discussed. The results indicate that the intrinsic stacking fault, dislocation loop and atomic cluster are generated below the machined surface along the cutting crystal directions. In particular, the Stacking Fault Tetrahedron (SFT) is generated inside the workpiece when the cutting crystal direction is along [ 1 ¯ 00 ] . However, a “V”-shape dislocation loop is formed in the workpiece along [ 1 ¯ 01 ] . Furthermore, atomic distribution of the machined surface indicates that the surface quality along [ 1 ¯ 00 ] is better than that along [ 1 ¯ 01 ] . In a certain range, the thickness of the amorphous layer increases gradually with the rise of cutting force during nanometric cutting process.

Creation of Dislocations in a Shall Copper Single Crystal

1992 ◽  
Vol 278 ◽  
Author(s):  
Masao Doyama
Keyword(s):  
Single Crystal ◽  
Yield Stress ◽  
Partial Dislocation ◽  
Stacking Fault ◽  
Copper Single Crystal ◽  
Shockley Partial ◽  
Partial Dislocations ◽  
Edge Dislocations

AbstractEdge dislocations were created on a surface of a small copper single crystal. Very sharp yield stress was observed when a partial dislocation was created. Edge dislocations in copper were split into Heidenreich–Shockley partial dislocations connected with the stacking fault.

Laser damage mechanism and in-situ observation of stacking fault relaxation in β-Ga2O3 single crystal by EFG method

CrystEngComm ◽  
2021 ◽  
Author(s):  
Bo Fu ◽  
Gaohang He ◽  
Wenxiang Mu ◽  
Yang Li ◽  
Boyuan Feng ◽  
...  
Keyword(s):  
Single Crystal ◽  
Light Field ◽  
Damage Mechanism ◽  
Stacking Fault ◽  
High Light ◽  
Laser Damage ◽  
In Situ Observation ◽  
Structure Destruction

We designed an original and effective method to study the laser damage mechanism of β-Ga2O3 single crystal grown by edge-defined film-fed growth (EFG). The structure destruction under high light field...

Sign in / Sign up

Export Citation Format

Share Document