Laser damage mechanism and in-situ observation of stacking fault relaxation in β-Ga2O3 single crystal by EFG method

CrystEngComm ◽  
2021 ◽  
Author(s):  
Bo Fu ◽  
Gaohang He ◽  
Wenxiang Mu ◽  
Yang Li ◽  
Boyuan Feng ◽  
...  
Keyword(s):  
Single Crystal ◽  
Light Field ◽  
Damage Mechanism ◽  
Stacking Fault ◽  
High Light ◽  
Laser Damage ◽  
In Situ Observation ◽  
Structure Destruction

We designed an original and effective method to study the laser damage mechanism of β-Ga2O3 single crystal grown by edge-defined film-fed growth (EFG). The structure destruction under high light field...

scholarly journals In-situ observation of stacking fault evolution in vacuum-deposited C60

2017 ◽  
Vol 111 (23) ◽  
pp. 233305 ◽  
Author(s):  
J. F. M. Hardigree ◽  
I. R. Ramirez ◽  
G. Mazzotta ◽  
C. Nicklin ◽  
M. Riede
Keyword(s):  
Stacking Fault ◽  
In Situ Observation ◽  
Fault Evolution

scholarly journals Fatigue Fracture Mechanism of a Nickel-Based Single Crystal Superalloy with Partially Recrystallized Grains at 550 °C by In Situ SEM Studies

Metals ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 1007
Author(s):  
Hao Yang ◽  
Jishen Jiang ◽  
Zhuozheng Wang ◽  
Xianfeng Ma ◽  
Jiajun Tu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Fatigue Fracture ◽  
Fracture Mechanism ◽  
Fatigue Cracks ◽  
Single Crystal Substrate ◽  
In Situ Observation ◽  
Slip Systems ◽  
Intergranular Cracking ◽  
Fatigue Fracture Mechanism

The fatigue fracture mechanism of a nickel-based single crystal (NBSC) superalloy with recrystallized grains was studied at 550 °C by in situ observation with a scanning electron microscope (SEM) for the first time. Multiple crack initiations associated with recrystallized grain boundaries and carbides were observed. By analysis of the slip traces and crack propagation planes, the operated slip systems were identified to be octahedral for both single crystal substrate and recrystallized grains. Distinct crystallographic fractures dominated, accompanied by recrystallized grain boundary associated crack initiations. This is different from the widely reported solely intergranular cracking at high temperature. Fatigue crack growth rate curves showed evident fluctuation, due to the interaction of fatigue cracks with local microstructures and the crack coalescence mechanism. Both the recrystallized grains and the competition between different slip systems were responsible for the deceleration and acceleration of fatigue microstructurally small crack behavior.

In situ observation of two-step 90° domain reversal with different characteristics in PMN–38%PT single crystal

2020 ◽  
Vol 55 (19) ◽  
pp. 8041-8049 ◽  
Author(s):  
Erding Zhao ◽  
Ze Fang ◽  
Mingqiang Cheng ◽  
Yalin Qin ◽  
Xiaodong Jiang ◽  
...  
Keyword(s):  
Single Crystal ◽  
In Situ Observation ◽  
Different Characteristics ◽  
Domain Reversal

scholarly journals In-Situ Observation on the Formation Behavior of the Deformation Kink Bands in Zn Single Crystal and LPSO Phase

2015 ◽  
Vol 56 (7) ◽  
pp. 943-951 ◽  
Author(s):  
Koji Hagihara ◽  
Masahito Honnami ◽  
Ryosuke Matsumoto ◽  
Yoshihiro Fukusumi ◽  
Hitoshi Izuno ◽  
...  
Keyword(s):  
Single Crystal ◽  
In Situ Observation ◽  
Kink Bands ◽  
Lpso Phase ◽  
Formation Behavior

In situ observation on formation process of nanoscale cracking during tension-compression fatigue of single crystal copper micron-scale specimen

2018 ◽  
Vol 153 ◽  
pp. 270-278 ◽  
Author(s):  
Takashi Sumigawa ◽  
Kim Byungwoon ◽  
Yuki Mizuno ◽  
Takuma Morimura ◽  
Takayuki Kitamura
Keyword(s):  
Single Crystal ◽  
Formation Process ◽  
In Situ Observation ◽  
Single Crystal Copper

In-situ observation of atomic processes in Xe nanocrystals embedded in al

1997 ◽  
Vol 504 ◽  
Author(s):  
K. Mitsuishi ◽  
M. Song ◽  
K. Furuya ◽  
R. C. Birtcher ◽  
C. W. Allen ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution Electron Microscopy ◽  
Stacking Fault ◽  
Self Organization ◽  
In Situ Observation ◽  
Layer By Layer ◽  
Atomic Processes ◽  
Fault Type ◽  
Resolution Electron

ABSTRACTSelf-organization processes in Xe nanocrystals embedded in Al are observed with in-situ high-resolution electron microscopy. Under electron irradiation, stacking fault type defects are produced in Xe nanocrystals. The defects recover in a layer by layer manner. Detailed analysis of the video reveals that the displacement of Xe atoms in the stacking fault was rather small for the Xe atoms at boundary between Xe and Al, suggesting the possibility of the stacking fault in Xe precipitate originating inside of precipitate, not at the Al/Xe interface.

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