Low temperature anneal of electron irradiation induced defects in p type silicon

1998 ◽  
Vol 14 (12) ◽  
pp. 1295-1298 ◽  
Author(s):  
M.-A. Trauwaert ◽  
J. Vanhellemont ◽  
H. E. Maes ◽  
A.-M. Van Bavel ◽  
G. Langouche
Keyword(s):  
Low Temperature ◽  
Electron Irradiation ◽  
Type Silicon ◽  
P Type ◽  
Induced Defects ◽  
Irradiation Induced Defects

Low temperature annealing of electron irradiation induced defects in 4H-SiC

2004 ◽  
Vol 85 (17) ◽  
pp. 3780-3782 ◽  
Author(s):  
Antonio Castaldini ◽  
Anna Cavallini ◽  
Lorenzo Rigutti ◽  
Filippo Nava
Keyword(s):  
Low Temperature ◽  
Electron Irradiation ◽  
Low Temperature Annealing ◽  
Induced Defects ◽  
Irradiation Induced Defects

Electron irradiation-induced defects in lithium doped n-type silicon with different oxygen concentrations

1988 ◽  
Vol 129 (4) ◽  
pp. 253-257 ◽  
Author(s):  
Xiuchen Yao ◽  
Guogang Qin ◽  
Taotao Jia ◽  
Shouli Luo ◽  
Liqiao Lan
Keyword(s):  
Electron Irradiation ◽  
Type Silicon ◽  
Induced Defects ◽  
Irradiation Induced Defects ◽  
Oxygen Concentrations

Self-annihilation of electron-irradiation-induced defects in InAsxP1−x∕InP multiquantum well solar cells

2007 ◽  
Vol 90 (23) ◽  
pp. 233111 ◽  
Author(s):  
Aurangzeb Khan ◽  
A. Freundlich ◽  
Jihua Gou ◽  
A. Gapud ◽  
M. Imazumi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electron Irradiation ◽  
Induced Defects ◽  
Irradiation Induced Defects ◽  
Multiquantum Well

Study of Compensation Defects and Electron Irradiation-Induced Defects in Undoped SI-InP by Positron Lifetime Spectroscopy

2008 ◽  
Vol 607 ◽  
pp. 134-136
Author(s):  
Y.J. Zhang ◽  
Ai Hong Deng ◽  
You Wen Zhao ◽  
J. Yu ◽  
X.X. Yu ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Positron Lifetime ◽  
Deep Level ◽  
High Concentration ◽  
Positron Annihilation Lifetime ◽  
Donor Type ◽  
Positron Lifetime Spectroscopy ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects

Positron annihilation lifetime (PAL) spectroscopy，photo-induced current transient spectroscopy (PICTS) and thermally stimulated current (TSC) have been employed to study the formation of compensation defects and their evolvement under iron phosphide (IP) ambience or pure phosphide (PP) ambience. In the formation of IP SI-InP, the diffusion of Fe atoms suppresses the formation of some open-volume defects. As to PP SI-InP, VInH4 complexes dissociate into acceptor vacancies VInHn(n-3)(n=0,1,2,3), which compensate residual donor type defects and make the sample semi-insulating. Electron irradiation-induced deep level defects have been studied by TSC in PP and IP SI-InP, respectively. In contrast to a high concentration of irradiation-induced defects in as-grown and PP annealed InP, IP SI-InP has a very low concentration of defects.

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