scholarly journals Composition Analysis of III-Nitrides at the Nanometer Scale: Comparison of Energy Dispersive X-ray Spectroscopy and Atom Probe Tomography

2016 ◽  
Vol 11 (1) ◽  
Author(s):  
Bastien Bonef ◽  
Miguel Lopez-Haro ◽  
Lynda Amichi ◽  
Mark Beeler ◽  
Adeline Grenier ◽  
...  
2017 ◽  
Vol 110 (14) ◽  
pp. 143101 ◽  
Author(s):  
Bastien Bonef ◽  
Massimo Catalano ◽  
Cory Lund ◽  
Steven P. Denbaars ◽  
Shuji Nakamura ◽  
...  

2016 ◽  
Vol 22 (6) ◽  
pp. 1251-1260 ◽  
Author(s):  
Wei Guo ◽  
Brian T. Sneed ◽  
Lin Zhou ◽  
Wei Tang ◽  
Matthew J. Kramer ◽  
...  

AbstractAlnico alloys have long been used as strong permanent magnets because of their ferromagnetism and high coercivity. Understanding their structural details allows for better prediction of the resulting magnetic properties. However, quantitative three-dimensional characterization of the phase separation in these alloys is still challenged by the spatial quantification of nanoscale phases. Herein, we apply a dual tomography approach, where correlative scanning transmission electron microscopy (STEM) energy-dispersive X-ray spectroscopic (EDS) tomography and atom probe tomography (APT) are used to investigate the initial phase separation process of an alnico 8 alloy upon non-magnetic annealing. STEM-EDS tomography provides information on the morphology and volume fractions of Fe–Co-rich and Νi–Al-rich phases after spinodal decomposition in addition to quantitative information of the composition of a nanoscale volume. Subsequent analysis of a portion of the same specimen by APT offers quantitative chemical information of each phase at the sub-nanometer scale. Furthermore, APT reveals small, 2–4 nm Fe-rich α1 phases that are nucleated in the Ni-rich α2 matrix. From this information, we show that phase separation of the alnico 8 alloy consists of both spinodal decomposition and nucleation and growth processes. The complementary benefits and challenges associated with correlative STEM-EDS and APT are discussed.


2011 ◽  
Vol 383-390 ◽  
pp. 7619-7623
Author(s):  
Z Z Lu ◽  
F. Yu ◽  
L. Yu ◽  
L. H. Cheng ◽  
P. Han

In this work, Si, Ge element composition distribution in Ge /Si1-xGex:C /Si substrate structure has been characterized and modified by planar scanning energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD). The Ge /Si1-xGex:C /Si substrate samples are grown by chemical vapor deposition (CVD) method. The accuracy of EDS value can be improved by ~ 32%. And the modified EDS results indicate the Ge distribution in the Ge/Si1-xGex:C/Si sub structure.


2015 ◽  
Vol 60 ◽  
pp. 60-65 ◽  
Author(s):  
R. Schirhagl ◽  
N. Raatz ◽  
J. Meijer ◽  
M. Markham ◽  
S.S.A. Gerstl ◽  
...  

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