Physical Properties of the Bulk GaN Crystals Grown by the High-Pressure, High-Temperature Method

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Henryk Teisseyre
1997 ◽  
Vol 64 (3) ◽  
pp. 247-250 ◽  
Author(s):  
V.D. Blank ◽  
S.G. Buga ◽  
N.R. Serebryanaya ◽  
G.A. Dubitsky ◽  
R.H. Bagramov ◽  
...  

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Lidia Lityńska-Dobrzyńska ◽  
...  

1997 ◽  
Vol 91 (5) ◽  
pp. 1003-1007 ◽  
Author(s):  
W. Szuszkiewicz ◽  
W. Gębicki ◽  
J. Bąk-Misiuk ◽  
J. Domagała ◽  
M. Leszczyński ◽  
...  

2016 ◽  
Vol 46 (5) ◽  
pp. 2570-2575 ◽  
Author(s):  
Jialiang Li ◽  
Gang Chen ◽  
Bo Duan ◽  
Yaju Zhu ◽  
Xiaojun Hu ◽  
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Chong-Xin Shan ◽  
Ming-Ming Jiang ◽  
Jie-Ming Qin ◽  
Guang-Chong Hu ◽  
...  

Intense electroluminescence has been obtained from ZnO nanowires with holes injected from p-ZnO:Sb preparedviaa high pressure high temperature method.


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