A Study Thermal Stability of Polyurethane Elastomers

2015 ◽  
pp. 15-25
Author(s):  
I Novakov ◽  
M Vaniev ◽  
D Medvedev ◽  
N Sidorenko ◽  
G Medvedev ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Polyurethane Elastomers ◽  
Thermal Stability Of

scholarly journals Thermal stability of segmented polyurethane elastomers reinforced by clay particles

2009 ◽  
Vol 63 (6) ◽  
pp. 621-628 ◽  
Author(s):  
Jelena Pavlicevic ◽  
Jaroslava Budinski-Simendic ◽  
Mészáros Szécsényi ◽  
Nada Lazic ◽  
Milena Spirkova ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Thermal Properties ◽  
Chain Extender ◽  
Hexamethylene Diisocyanate ◽  
Scanning Calorimetry ◽  
Modulated Differential Scanning Calorimetry ◽  
Polyurethane Elastomers ◽  
Oh Groups ◽  
Clay Nanoparticles ◽  
Thermal Stability Of

The aim of this work was to determine the influence of clay nanoparticles on thermal properties of segmented polyurethanes based on hexamethylene- diisocyanate, aliphatic polycarbonate diol and 1,4-butanediol as chain extender. The organically modified particles of montmorillonite and bentonite were used as reinforcing fillers. The structure of elastomeric materials was varied either by diol type or chain extender content. The ratio of OH groups from diol and chain extender (R) was either 1 or 10. Thermal properties of prepared materials were determined using modulated differential scanning calorimetry (MDSC). Thermal stability of obtained elastomers has been studied by simultaneously thermogravimetry coupled with DSC. The glass transition temperature, Tg, of soft segments for all investigated samples was about -33?C. On the basis of DTG results, it was concluded that obtained materials were very stable up to 300?C.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal stability of Al-Cu-Fe icosahedral alloys

1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of
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