Conductivity maximum at low temperatures in metallic Si:P near the metal-insulator transition

1996 ◽  
Vol 36 (7) ◽  
pp. 527-532 ◽  
Author(s):  
A Blaschette ◽  
A Ruzzu ◽  
S Wagner ◽  
H. v Löhneysen
Keyword(s):  
Low Temperatures ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

Magnetic field-induced metal-insulator transition in InP: new result at very low temperatures

1984 ◽  
Vol 17 (16) ◽  
pp. L411-L416 ◽  
Author(s):  
G Biskupski ◽  
H Dubois ◽  
J L Wojkiewicz ◽  
A Briggs ◽  
G Remenyi
Keyword(s):  
Magnetic Field ◽  
Low Temperatures ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

Hopping Conduction Near the Metal-Insulator Transition in CdMnTe:In and Evidence for a Magnetic Hard Gap in the Density of States

1994 ◽  
Vol 08 (07) ◽  
pp. 905-912 ◽  
Author(s):  
I. Terry ◽  
T. Penney ◽  
S. von Molnár ◽  
P. Becla
Keyword(s):  
Carrier Concentration ◽  
Density Of States ◽  
Low Temperatures ◽  
Localization Length ◽  
Insulator Transition ◽  
Variable Range Hopping ◽  
Coulomb Interactions ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Magnetic Polarons

A series of resistivity curves is obtained as a function carrier concentration in just one sample of the dilute magnetic persistent photoconductor Cd0.91Mn0.09Te:In. The measurements, made at carrier concentrations approaching the metal-insulator transition, reveal a cross-over from an exp(To/T)1/2 dependence to an exp(EH/T) form when lowering temperature. The exp(To/T)1/2 dependence is characteristic of variable range hopping in the presence of Coulomb interactions, while the energy EH in the activated form is associated with a hard gap in the density of states that is magnetic in origin. All the data are shown to scale onto a single curve. The localization length. ξ, is found to have the same critical dependence on carrier concentration as that of the measured dielectric constant, κ, when approaching the metal-insulator transition. The temperature dependence of the resistivity is interpreted in terms of the orientation of Mn spins by carriers due to the s-d exchange interaction (the formation of magnetic polarons). This model can also account for the large positive and negative magnetoresistance observed in Cd0.91Mn0.09Te:In at low temperatures.

Study of the Elastic Property of the Metal-Insulator Transition Compound SmRu4P12 at Extremely Low Temperatures

2006 ◽  
Author(s):  
Y. Nakanishi ◽  
T. Tanizawa ◽  
A. Sugihara ◽  
M. Oikawa ◽  
M. Yoshizawa ◽  
...  
Keyword(s):  
Elastic Property ◽  
Low Temperatures ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

Magnetic-field induced metal-insulator transition in InSb and Hg0.79Cd0.21Te at very low temperatures

1986 ◽  
Vol 60 (10) ◽  
pp. 817-820 ◽  
Author(s):  
M. Shayegan ◽  
V.J. Goldman ◽  
H.D. Drew ◽  
N.A. Fortune ◽  
J.S. Brooks
Keyword(s):  
Magnetic Field ◽  
Low Temperatures ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator
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