Strain state in single quantum well GaAs/1ML-InAs/GaAs(100) analysed by high-resolution X-ray diffraction

We applied the mosaic crystal model to calculate the dynamical x-ray rocking curves for a coherently-strained GaAs/In0.3Ga0.7As/GaAs single quantum well grown epitaxially on a GaAs (001) substrate for a number of reflection profiles, including 004, 113, 224, 044 and 444 reflections. We show that it is possible to estimate the threading dislocation density in the quantum well, and therefore detect the pseudomorphic-metamorphic transition, using the widths or normalized intensities of the primary quantum well Bragg peak, or using the widths of the Pendellösung fringes associated with the quantum well structure.

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X‐ray diffraction study of GaAs/InAs/GaAs ultrathin single quantum well

Journal of Applied Physics ◽

10.1063/1.361526 ◽

1996 ◽

Vol 79 (10) ◽

pp. 7627-7631 ◽

Cited By ~ 2

Author(s):

Jie Bai ◽

Wenhan Liu ◽

Ziqin Wu ◽

Yutian Wang ◽

Lisong Xiu ◽

...

Keyword(s):

Quantum Well ◽

Diffraction Study ◽

Single Quantum ◽

X Ray Diffraction ◽

Single Quantum Well ◽

X Ray

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High Resolution X-Ray Diffraction Investigations of Si/SiGe Quantum Well Structures and Si/Ge Short-Period Superlattices

Acta Physica Polonica A ◽

10.12693/aphyspola.84.475 ◽

1993 ◽

Vol 84 (3) ◽

pp. 475-489

Author(s):

G. Bauer ◽

E. Koppensteiner ◽

P. Hamberger ◽

J. Nützel ◽

G. Abstreiter ◽

...

Keyword(s):

High Resolution ◽

Quantum Well ◽

X Ray Diffraction ◽

Quantum Well Structures ◽

X Ray ◽

Short Period ◽

Short Period Superlattices

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Quantitative analysis of the compositional profile of a single quantum well by grazing incidence x-ray reflectivity and photoluminescence

Applied Physics Letters ◽

10.1063/1.123784 ◽

1999 ◽

Vol 74 (15) ◽

pp. 2152-2154 ◽

Cited By ~ 2

Author(s):

Youngboo Moon ◽

Euijoon Yoon

Keyword(s):

Quantitative Analysis ◽

Quantum Well ◽

Grazing Incidence ◽

Single Quantum ◽

Single Quantum Well ◽

Compositional Profile ◽

X Ray

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X-ray scattering from a single-quantum-well heterostructure

Semiconductor Science and Technology ◽

10.1088/0268-1242/2/4/007 ◽

1987 ◽

Vol 2 (4) ◽

pp. 241-243 ◽

Cited By ~ 25

Author(s):

T W Ryan ◽

P D Hatton ◽

S Bates ◽

M Watt ◽

C Sotomayor-Torres

Keyword(s):

Quantum Well ◽

Single Quantum ◽

Single Quantum Well ◽

X Ray ◽

X Ray Scattering ◽

Ray Scattering

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Evaluation of the strain state in SiGe/Si heterostructures by high resolution X-ray diffraction and convergent beam electron diffraction

Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. ◽

10.1109/ipfa.2005.1469184 ◽

2005 ◽

Author(s):

S.L. Toh ◽

K. Li ◽

C.H. Ang ◽

R. Rao ◽

E. Er ◽

...

Keyword(s):

High Resolution ◽

Electron Diffraction ◽

Strain State ◽

Convergent Beam Electron Diffraction ◽

X Ray Diffraction ◽

Beam Electron ◽

X Ray ◽

Convergent Beam

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Spontaneous Lateral Modulations in InAlAs Buffer Layers Grown by MBE on InP Substrates

MRS Proceedings ◽

10.1557/proc-417-265 ◽

1995 ◽

Vol 417 ◽

Cited By ~ 6

Author(s):

F. Peiró ◽

A. Cornet ◽

J. C. Ferrer ◽

J. R. Morante ◽

G. Halkias ◽

...

Keyword(s):

Quantum Wells ◽

Molecular Beam ◽

Buffer Layers ◽

Single Quantum ◽

X Ray Diffraction ◽

Single Quantum Well ◽

Quantum Well Structures ◽

X Ray ◽

Transmission Electron ◽

Inp Substrates

AbstractTransmission Electron Microscopy (TEM) and X-ray Diffraction (XRD) have been used to analyze the spontaneous appearance of lateral composition modulations in InyAl1−yAs (yIn.≅ 50%) buffer layers of single quantum well structures grown by molecular beam epitaxy on exact and vicinal (100) InP substrates, at growth temperatures in the range of 530°C–580°C. The influence of the growth temperature, substrate misorientation and epilayer mismatch on the InAlAs lateral modulation is discussed. The development of a self-induced quantum-wire like morphology in the In0.53Ga0.47As single quantum wells grown over the modulated buffers is also commented on.

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